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Title

Virtual Transistor Fabrication and Characterization

Supervisors

 
A/P Zhou Xing Phone: 6790-4532, Office: S1-B1c-95, Email: exzhou@ntu.edu.sg
Ast/P Daniel Poenar Phone: 6790-4237, Office: S2.2-B2-06, Email: epdpuiu@ntu.edu.sg
Lab IC Design II Lab, S1-B2b-10, Phone: 6790-5467

Students

(Project ID: E014)
CHONG HAN PING LIU NA
HENDRICK MARTHAPANG LOH CHAN SIONG, ALVIN
HO WEE KHEE NG CHO SEONG
JIANG JISU SIANG CHAI LIN
JIANG NAN SIK SWEE SENG
KOH CHUAN WAI SOH CHEE SENG
KONG KUAN WEI SU CHOON KEN
LEONG WAI TUCK TENG CHIA PING
LIEW KOK HONG YANG PEIZHEN
LIM JAN PANG ZHAO YUAN

Abstract

Transistor fabrication and characterization has been the corner-stone of modern VLSI circuits. In this project, state-of-the-art technology computer-aided design (TCAD) tools will be used to virtually fabricate and characterize MOS transistors used in semiconductor wafer fabs. Students will have a first-hand experience in visualizing modern wafer processing, such as diffusion, oxidation, ion implantation, and device operation and optimization. The project will serve as a first step towards the entrance to the fascinating world of deep-submicron semiconductor technologies.

Objectives

  • Exposure to modern semiconductor fabrication processes and devices through a simple example
  • Practical experience in the state-of-the-art computer simulation tools to emulate simplified physical phenomena
  • Knowledge in design of experiment (DOE), modeling, and data analysis
  • Creativity and innovative ideas to nurture technopreneurship
  • Motivation and interest in the fascinating field of Microelectronics
    •

    Scope

  • Reading on general semiconductor processes and device characterization
  • Familiarization with the TCAD tools (such as DOE tool, process and device simulators)
  • Virtual Wafer Fabrication (VWF) -- simulate the fabrication process of a simple transistor
  • Virtual Device Characterization (VDC) -- simulate the electrical (I-V) characteristics of the "fabricated" transistor
  • Virtual Process Integration (VPI) -- optimize transistor performance through process parameter variations
    •

    Methodology

  • Problem specification -- decompose the complex electronic "system" to various levels of "abstraction" (or model, "mental image of reality")
  • Design conceptualization -- identify the major target parameters and process variables
  • Design implementation -- implement the design to obtain the required target-variable dependency
  • Numerical simulation -- run process and device simulation
  • Data analysis -- analyze and understand the simulated data
  • Application -- extend the idea (transistor example) to large scale integrated circuit design and fabrication
  • Documentation -- summarize what has been achieved and demonstrate what could be done
    •

    Tasks

    Deliverables

  • A Design of Experiment (DOE) of the nMOS transistor fabrication and characterization implemented in TMA WorkBench (TWB)
  • Cross-sectional views and doping profiles of various processing conditions
  • Current-voltage (I-V) characteristics of the transistor under various operating conditions
  • Graphical plots of the target–variable relations from the simulated numerical data
  • A systematic approach to transistor performance optimization through process variation
  • A summary on the generalization of the TCAD approach to ULSI technology development, and commercial exploitation for the application of the VWF technology and its economical/technological impact
    •

    Management

    Roles of the Group Leaders

  • Organize group activities for the group during the week
  • Assign specific tasks for each sub-group/individual for the week
  • Coordinate interactions with other groups
  • Present group results and activities at the weekend oral presentation
  • Liaison with the supervisors
    •

    Assessment

  • Attitude: motivation and enthusiasm
  • Aptitude: approach and participation
  • Altitude: understanding and creativity
    •

    References

    Relevant Links


    Last update: 15 November 2003
    X. Zhou