E425: Engineering Design V   TCAD: Process and Device Simulation  

X. ZHOU

© 1997

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  Step 7: Simulated Structure    
 
Step 7: N-well drive-in: 60 min., 750->1150 °C, N₂=3 SLM, O₂=50 SCCM; 260 min., 1150 °C, N₂=3 SLM, O₂=3.5 SLM; 60 min., 1150 °C, dry N₂=3 SLM; 60 min., 1150->750 °C, dry N₂=3 SLM.  Target: x_j = 3.4 µm.
 

Cross-Sectional View

Input Command

$step nwell_drive  diffusion time=60 temp=750 t.final=1150 f.N2=3 f.O2=0.05   diffusion time=260 temp=1150 f.N2=3 f.O2=3.5   diffusion time=60 temp=1150 inert   diffusion time=60 temp=1150 t.final=750 inert   $step extr_tox_well  extract oxide thicknes x=4 prefix="tox_subs " suffix="(?) um"  out.file=nwell:0_0.ext   extract oxide thicknes x=14 prefix="tox_well " suffix="(0.3) um"  out.file=nwell:0_0.ext   $step extr_xj_well  select z=doping   extract silicon d.extr x=14 value=0 prefix="xj_well " suffix="(3.4) um" out.file=nwell:0_0.ext