E425: Engineering Design V
 
TCAD: Process and Device Simulation
 
X. ZHOU
© 1997
Step-21
Step-23

 
Step 22: Simulated Structure
 
Step-22
 
 
Step 22: Poly-Si deposition: Deposit polysilicon: 4500 Å; P-doped: 1020 cm-3; Temperature: 610 °C.
 
Cross-Sectional View
Input Command
$step deposit_poly1 
deposit poly thick=0.45 spaces=2 phos=1e20 concen temp=610