E425: Engineering Design V
 
TCAD: Process and Device Simulation
 
X. ZHOU
© 1997
Step-16
Step-18

 
Step 17: Simulated Structure
 
Step-17
 
 
Step 17: Nitride and pad oxide etch: Strip all Si3N4; Etch SiO2: ~300 Å.
 
Cross-Sectional View
Input Command
$step strip_nitride 
etch nitride all  
$step extr_tox_fld 
extract oxide thicknes x=9 prefix="tox_fld " suffix="(0.65) um"  out.file=field_ox:0_0.ext  
extract oxide thicknes x=4 prefix="tox_padn " suffix="(?) um"  out.file=field_ox:0_0.ext  
extract oxide thicknes x=14 prefix="tox_padp " suffix="(?) um"  out.file=field_ox:0_0.ext  
$step etch_oxide 
etch oxide thicknes=0.032