E425: Engineering Design V   TCAD: Process and Device Simulation  

X. ZHOU

© 1997

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  Step 16: Simulated Structure    
 
Step 16: Field (LOCOS) oxidation: 20 min., 750->950 °C, N₂=3 SLM, O₂=50 SCCM; 5 min., 950 °C, dry O₂=3 SLM; 125 min., 1000°C, steam H₂=3 SLM, O₂=1.7 SLM; 5 min., 950 °C, dry O₂=3 SLM; 20 min., 950->750 °C, dry N₂=3 SLM.  Target: t_ox = 6500 Å.
 

Cross-Sectional View	Input Command
	$step field_oxide  diffusion time=20 temp=750 t.final=950 f.N2=3 f.O2=0.05   diffusion time=5 temp=950 dryO2   diffusion time=125 temp=1000 f.H2=3 f.O2=1.7   diffusion time=5 temp=950 dryO2   diffusion time=20 temp=950 t.final=750 inert