Proc. of the 12th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES2005), pp. 881-886

Kraków, Poland, June 22-25, 2005.

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Transistor compact model has been the cornerstone for bridging the design of a VLSI circuit/system to the given technology.  This has been demonstrated in the past 4 decades and will continue to be the driving force for developing more accurate, scalable, predictive, and simple compact models that are also extendable to keep up with future technology generations.  In this paper, after a brief review of various MOSFET modeling approaches such as threshold-voltage, inversion-charge, and surface-potential based models, a unified regional charge-based model with non-pinned surface potential is described, with emphasis on the ideas and sample results, which demonstrates combined advantages of the three modeling approaches.  The key to the scalable and predictive capability of the model is due to the regional approach of current and charge formulations with the physical surface-potential solutions built in while still retaining the concept of threshold voltage for technology characterization.  The model (called Xsim) requires minimum measured data with one-iteration parameter extraction, and can be extended to new generation MOS technologies.

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