Unified Regional Charge Model
with Non-pinned Surface Potential
(Invited Paper)
Xing Zhou*, Siau Ben Chiah*, Karthik Chandrasekaran*,
Guan Huei See*, Wangzuo Shangguan*,
Shesh Mani Pandey†, Chew Hoe Ang†,
Michael Cheng†, Sanford Chu†,
Liang-Choo Hsia†
* School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial
Park D, Street 2, Singapore 738406
Email: exzhou@ntu.edu.sg
Proc. of the 2nd International Workshop on
Compact Modeling (IWCM-2005)
at the Asia and South Pacific Design Automation
Conference (ASP-DAC2005),
Shanghai, January 18-21, 2005, pp. 13-17.
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Abstract
This paper presents a complete single-piece MOSFET charge model based
on non-pinned surface potential in a unified regional formulation.
The regional model predicts physical behavior asymptotically while joins
seamlessly at the flat-band and threshold-voltage transitions with Cinf
continuity for all regions of operation. The model is consistent
with conventional threshold-voltage-based models while maintaining symmetry
at zero drain-source bias.
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Citation
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