J. WENG, G. RUAN* and X. ZHOU
School of Electrical and Electronic Engineering
Nanyang Technological University, Singapore 2263
* Microelectronics Institute, Fu-Dan University, Shanghai, China
The 5th International Symposium on IC Technology, Systems & Applications (ISIC-93)
Singapore, September 15-17, 1993, pp. 151-155.
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The effects of graded heterostructure in the base on the npn
AlGaAs/GaAs HBT's performance have been investigated. The analysis as well
as simulations have given the consistent results. The graded heterostructure
in the base can be utilized efficiently to generate a built-in field without
grading the base doping concentration. This improves the transistor high-frequency
performance, while there is no significant deterioration in the transistor
DC characteristics except for an increased emitter-base turn-on voltage.