G. J. Zhu, X. Zhou, T. S. Lee, L. K. Ang, G. H. See, and S. H. Lin

Proc. of the 2008 European Solid-State Device Research Conference (ESSDERC2008).

Edinburgh, UK, September 15-19, 2008, pp. 182-185.

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A physics-based compact model for undoped symmetric double-gate MOSFETs with Schottky-barrier source and drain is formulated based on the quasi-2D surface-potential solution and Miller–Good tunneling method.  Essential physics due to the screening of the gate field by free carriers, which is absent in previous literatures, is included in the model.  Electron and hole transports for all positive/negative gate/drain biases are modeled within the single-piece core model that scales with device geometry, body/oxide thickness, SB workfunction, and source/drain contact size.  Unlike 2D numerical simulation, the proposed compact model, which is simple and fast yet accurate, is circuit-compatible and suitable for future VLSI circuit design using SB-MOS devices.  The proposed modeling methodology can be easily extended to handle other promising devices such as SB silicon nanowires.

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