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Synopsis |
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The scaling of CMOS devices is associated with adverse short channel effects, expeonential increase in leakage current, increased noise, and power density. In this tutorial I will present different components of power dissipation in scaled CMOS circuits and techniques to improve power dissipation at different levels of design abstraction -- device, circuits, and systems.
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RFCMOS and SiGe BiCMOS Technologies for
RF/Analog and Mixed Signal Integrated Circuits
Speaker: Michael Liehr, Xiaojuen Yuan, IBM SRDC, TSG, USA
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Synopsis |
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The global demand for seamless wireless and wired communications has driven the semiconductor technology toward Low cost, low power, high speed and high integration. RFCMOS technology, was once only a research development in universities, is now seen in several low cost commercial products for such challenging systems as GSM and CDMA transceivers. The SiGe BiCMOS technology has seen replacing GaAs in many applications up to 60GHz. This tutorial covers the following topics:
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RFCMOS technology introduction: |
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Device scaling and trade offs, Device RF figure of merit |
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SiGe BiCMOS technology introduction: |
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Device scaling and trade offs, Device RF figure of Merit
Comparing the RFCMOS and SiGe BiCMOS Technolgies from performance, cost and applications
Introduction of Passive device development in RFCMOS and SiGe BiCMOS
technologies
Architecture review of RF Transceivers which are suitable for RFCMOS and SiGe BiCMOS integration
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