Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together.  The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors.  The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation, which are largely categorized into the following groups:

• Intrinsic Models

• Bulk MOSFET
• SOI MOSFET (partial-/full-depletion)
• Multiple-Gate FET (DG/TG/GAA)
• High-Voltage/LDMOS
• Thin-Film Transistor (TFT)
• Schottky-Barrier/Tunneling FET (SB-FET/TFET)
• Bipolar/Junction (BJT/HBT/SiGe/JFET)
• HEMT (GaN/InGaP/InGaAs)
• RF/noise

• Extrinsic/Interconnect Models

• Parasitic elements
• Passive device
• Diode
• Resistor
• ESD
• Interconnect

• Atomic/Quantum Models

• Ballistic device
• Carbon-Nanotube (CNFET)
• Organic FET

• Statistical Models

• Statistical/variability
• Reliability/hot carrier
• Numerical/TCAD/table-based

• Multi-Level Models
• Subcircuit model
• Gate/block model
• Behavioral model

• Model Extraction and Interface

• Parameter extraction and optimization
• Model-simulator interface
• Model standardization

• Mansun Chan, Hong Kong University of Science and Technology, Hong Kong
• Yogesh Chauhan, Indian Institute of Technology Kanpur, India
• Binbin Jie and Chihtang Sah, Xiamen University, China
• Mark Lundstrom, Purdue University, USA
• Mitiko Miura-Mattausch, Hiroshima University, Japan
• Michael Schröter, Technical University Dresden, Germany
• Michael Shur, Rensselaer Polytechnic Institute, USA
• Gert-Jan Smit, NXP, The Netherlands
• Yan Wang, Tsinghua University, China
• Xing Zhou, Nanyang Technological University, Singapore

• Nanotransistors From a Virtual Source Perspective

Mark Lundstrom, Purdue University, USA

• Modeling of Thin-Film Transistors Based on Poisson Equation

Mitiko Miura-Mattausch, Hiroshima University, Japan

• CNTFET Based HF Electronics - State of the Art and Future Prospects

Michael Schröter, University of Technology Dresden, Germany

Abstracts due: 22 January 2014.