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Workshop on Compact Modeling at the Microtech 2010 |
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Date
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June 23, 2010 | |
| Venue | Anaheim Convention Center
Anaheim, California, USA  |
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| Synopsis | Compact Models
(CMs) for circuit simulation have been at the heart of CAD tools for circuit
design over the past decades, and are playing an ever increasingly important
role in the nanometer system-on-chip (SOC) era. As the mainstream
MOS technology is scaled into the nanometer regime, development of a truly
physical and predictive compact model for circuit simulation that covers
geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes
a major challenge.
Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together. The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors. The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation, which are largely categorized into the following groups:
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| Workshop
Program |
WCM2010
Program has been posted at the following web:
There are 19 contributed papers in
4 sessions.
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| Contributed Papers | Contributed
papers are solicitated for Oral/Poster presentations. Please follow
Microtech website for instructions
on abstract preparation and online submission by choosing an appropriate
topic from the following link:
See Microtech website on information
for authors:
See Microtech website for conference registration: |
top |
| Presentation
Slides |
Contributed
presentation slides have been posted after the conference.
(Click
on each 
to download the PDF file. © Copyright
of the PDF files belongs to the respective contributors. Last update:
Aug. 23.)
 Download
and save the entire ZIP file of presentation slides (5MB)
Workshop
Program |
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| B.
Jie, Theory of Bipolar MOSFET (BiFET) with Electrically Short Channels
H.
Wang, Impact of Gate-Induced-Drain-Leakage Current Modeling on
Circuit Simulations in 45nm SOI Technology and Beyond Y.
Deng, Modeling of Gate Leakage, Floating Body Effect, and
History Effect in 32nm HKMG PD-SOI CMOS H.
Abebe, Electrostatic Potential Compact Model for Symmetric and
Asymmetric Lightly Doped DG-MOSFET Devices X.
Zhou, Xsim: Benchmark Tests for the Unified DG/GAA MOSFET Compact Model
B.
Cousin, A Continuous Compact Model of Short-Channel Effects for Undoped
Cylindrical Gate-All-Around MOSFETs
A.
Dey, Analytical Solution of Surface Potential for Un-Doped Surrounding-Gate
MOSFET
N.
Lu, Modeling of Mismatch and Across-Chip Variations in Compact
Device Models H.
Abebe, Improved Compact Model of Quantum Sub-band Energy Levels for
MOSFET Device Application
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| Websites for Proceedings | Workshop proceedings
will be available online after the conference.
Nanotech 2010, Volume 2, Chapter 11 |
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| WCM2010
official websites |
http://www.techconnectworld.com/Microtech2010/symposia/WCM.html | |
| WCM2009 website | View 2009 WCM program and presentation slides | |
| WCM2008 website | View 2008 WCM program and presentation slides | |
| WCM2007 website | View 2007 WCM program and presentation slides | |
| WCM2006 website | View 2006 WCM program and presentation slides | |
| WCM2005 website | View 2005 WCM program and presentation slides | |
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WCM2004
website
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View 2004 WCM program and presentation slides | |
| WCM2003 website | View 2003 WCM program and presentation slides | |
| WCM2002 website | View 2002 WCM program and presentation slides |
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| (Updated: August 23, 2010) |
