Technical Proceedings of the 2005 Workshop on Compact Modeling

Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together. The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors. The creation of WCM within MSM/Nanotech series is a natural response of the CM community to the increasing demand in the field. Through four years of collective contributions from WCM participants since 2002, WCM has established itself as a premier forum for the CM community in knowledge creation, information exchange, and promotion of model diversity. Ultimately, the result of such a forum will benefit not only the model developers, but also as a service to the entire technology, modeling, and design communities. 

The fourth WCM at Nanotech 2005 has reached a new level of maturity and diversity, which is reflected in this special (separate) volume for WCM in the Nanotech Proceedings. For the first time, WCM has a keynote address on "A History of MOS Transistor Compact Modeling," given by Professor Chih-Tang Sah, whose well-known MOSFET theory in the mid-1960's, 40-years ago, is still the guide for contemporary MOS CM developments. His comprehensive keynote paper opening this book not only traces back the early history of MOS transistor model development, but also provides a detailed device-physics/mathematical development on MOS transistor modeling. Another historical first included in this volume is the joint-authored review paper on "Advanced Compact Models for MOSFETs," which is contributed by 10 experts in the CM field, and edited by Dr. Josef Watts and presented by Dr. Colin McAndrew at the special Forum, followed by another 8 forum presenters to debate on the 'MOSFET CM Utopia': Surface-potential versus charge based approaches to MOSFET compact modeling, as well as an evening Panel discussion on 'MOSFET CM Development Utopia' with panelists also from design/modeling communities. This volume includes the invited papers for WCM 2005, with speakers from 11 countries all over the world and topics that cover a wide range of CM spectrum: intrinsic bulk, double-gate/multiple-gate/floating-gate/high-voltage MOSFET, RF, high-K, noise, interconnect, bipolar/HBT, JFET, and modeling for design, and the contributed poster papers as well. This volume also includes the invited papers presented at the 2003 and 2004 WCM, which makes it truly useful and valuable not only for CM developers but also for device engineers and circuit designers who want to keep up with the latest development in compact models for circuit simulation. 

Special thanks go to all this year and past year WCM invited speakers, forum presenters, panelists, as well as contributed-paper speakers, without whom this Workshop will not be successful. I am indebted to Dr. Josef Watts, Dr. Colin McAndrew, and Dr. Narain Arora for their special efforts in organizing this year's joint-author paper as well as the Forum and Panel, as well as to Prof. Chih-Tang Sah for his devotion in delivering the keynote paper. I would also like to take this opportunity to thank all those who helped chairing the sessions for this year and past years' Workshops: Dr. Narain Arora, Prof. Mansun Chan, Prof. Jamal Deen, Prof. Robert Dutton, Prof. Christian Enz, Prof. Jerry Fossum, Prof. Carlos Galup-Montoro, Dr. Dirk Klaassen, Dr. Albert Kordesch, Dr. Shiuh-Wuu Lee, Prof. Juin Liou, Prof. Serge Luryi, Dr. Colin McAndrew, Prof. Mitiko Miura-Mattausch, Prof. Adelmo Ortiz-Conde, Prof. Mahesh Patil, Dr. Josef Watts. Last but not the least, the special support and effort from Dr. Matthew Laudon, Dr. Bart Romanowicz, and Ms. Sarah Wenning of NSTI in putting this special WCM volume together as well as all their efforts in the past WCM organizations are gratefully acknowledged. 

Xing Zhou
Nanyang Technological University 
Singapore
April 3, 2005