With the spatial scale of structures employed in devices getting to nanometer scale, the underlying physics, chemistry and materials properties in nano-scale are important for the emerging nanodevices, either nanoelectronics or nano-optoelectronics. In such nanometer scale, quantum effects can not be ignored that traditional equivalent-circuit type models may not be sufficient to explain or predict the performance of the nanodevices.  The objectives of this course are
1. To gain sufficient physics-concepts for practical engineers in emerging nanodevices
2. To understand the basic of quantum transport from atoms, nano-wire to transistor level
3. To gain knowledge of band structures of quantum well semiconductors, density of state and Fermi level calculations.
4. To apply the knowledge to design and analyze quantum well photodetector and quantum cascade emitter.

Notes

Design Exercise

Compact Model Plots - 0.25 um

NM6604 Data (3-level splits)

    References

Simon Sze and Ming-Kwei Lee, Semiconductor Devices - Physics and Technology, 3rd ed., Wiley (2013).

Chenming Calvin Hu, Modern Semiconductor Devices for Integrated Circuits, Pearson (2010).

Yuan Taur and Tak H. Ning, Fundamentals of Modern VLSI Devices, Cambridge Univ. Press (2009).

Arora Narain, MOSFET Models for VLSI Circuit Simulation – Theory and Practice, Springer-Verlag (1993). Reprinted by World Scientific (2006).

• X. Zhou, K. Y. Lim, and D. Lim, "A General Approach to Compact Threshold Voltage Formulation Based on 2-D Numerical Simulation and Experimental Correlation for Deep-Submicron ULSI Technology Development," IEEE Trans. Electron Devices, Vol. 47, No. 1, pp. 214-221, Jan. 2000.
  
• S. B. Chiah, X. Zhou, K. Y. Lim, Y. Wang, A. See, and L. Chan, "Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET's," Proc. of the 4th International Conference on Modeling and Simulation of Microsystems (MSM2001), Hilton Head Island, SC, Mar. 19-21, 2001, pp. 486-489.
• K. Y. Lim and X. Zhou, "A Physically-Based Semi-Empirical Effective Mobility Model for MOSFET Compact I-V Modeling," Solid-State Electron., Vol. 45, No. 1, pp. 193-197, Jan. 2001.
• K. Y. Lim and X. Zhou, "Modeling of Threshold Voltage with Reverse Short Channel Effect," Proc. of the 3rd International Conference on Modeling and Simulation of Microsystems (MSM2000), San Diego, Mar. 27-29, 2000, pp. 317-320.
• X. Zhou and K. Y. Lim, "Unified MOSFET Compact I-V Model Formulation through Physics-Based Effective Transformation," IEEE Trans. Electron Devices, Vol. 48, No. 5, pp. 887-896, May 2001. 
• X. Zhou, "The Missing Link to Seamless Simulation," (Invited Feature Article), IEEE Circuits Devices Mag., Vol. 19, No. 3, pp. 9-17, May 2003. 
  

• Link to NM6604
• GIST - NTU-TUM MSc in Green Electronics (Microelectronics)