Technology & Engineering Research Programme
(1999)

Title

Semiconductor Process/Device Simulation with TCAD 

Students

Chong En Ling (ACJC)
Samvita R Padukone (NJC)

Abstract

Technology computer-aided design (TCAD) tools have become increasingly popular in aiding new semiconductor technology development.  In this project, a simple semiconductor junction diode will be virtually “fabricated” and characterized using TCAD tools.  The students will gain practical experience and knowledge in visualizing semiconductor device fabrication and operation.

Objectives

  • Exposure to modern semiconductor fabrication processes and devices through a simple example (diode)
  • Practical experience in the state-of-the-art computer simulation tools to emulate simplified physical phenomena
  • Knowledge in design of experiment (DOE), modeling, and data analysis
  • Motivation in carrying out research
  • Scope

  • Reading on general semiconductor processes (such as implantation, diffusion, etc.) and device characterization (such as I-V, C-V, etc.)
  • Familiarization with the TCAD tools (such as DOE tool, process and device simulators)
  • Virtual wafer fabrication (VWF) — simulate the fabrication process of a simple junction diode
  • Virtual device characterization (VDC) — simulate the electrical (I-V) characteristics of the “fabricated” diode
  • Study on the target–variable dependency
  • Methodology

  • Design conceptualization — identify the major target parameters and process variables
  • Design implementation — implement the design to obtain the required target–variable dependency
  • Numerical simulation — run process and device simulation
  • Data analysis — analyze and understand the simulated data
  • Physical modeling — extract physical model parameters from the simulated device
  • Tasks

  • Study the basic diode equation and its I-V characteristics
  • Understand the basic process steps to fabricate the diode
  • Identify the design targets (turn-on voltage, leakage current, ideality factor) and variables (implant dose and energy, diffusion time and temperature, substrate doping)
  • Design and implement the experiment through DOE and numerical simulation (major task)
  • Obtain the target–variable relationship by graphical plots
  • Model the numerical data by physical equations
  • Document the project and summarize the experience
  • Links

  • TERP
  • TCAD
  • ReportDownload PDF