This project is directed towards numerical exploration of charge/capacitance modeling of emerging double-gate (DG) and silicon-nanowire (SiNW) MOSFETs.  Numerical AC characterization of these futuristic devices provides insight into device physics and operation, which are in general difficult to measure for practical small devices.  Results of such simulations also provide valuable information for compact model development.  The student is expected to learn a lot from the project in terms of basic device physics as well as their characteristics.