Schottky-barrier (SB) MOSFETs have received a renewed interest recently due to their low parasitic source/drain resistance and superior scalability, which include device structures such as SOI, double-gate (DG), and silicon-nanowire (SiNW) MOSFETs.  In this project, various SB-MOSFETs will be studies using numerical simulators, from which performance comparisons can be made in terms of device structure variations, such as device geometry (gate length), layer thickness (oxide/body), contact materials, etc.  The project provides with the student a challenge in exploring unknowns and futuristic devices.