GaN transistors are important device building blocks for high-voltage/high-power applications. In this project, GaN transistors will be simulated by commercial numerical simulators, from which transistor terminal characteristics will be obtained and analyzed. Results of such investigations will be useful in developing and validating a compact model for GaN transistors. This project is part of a large national project in GaN-on-Silicon device characterization and process-design-kit (PDK) establishment. The student is expected to gain insight into GaN devices and practical experience in transistor modeling.