Silicon-on-Insulator (SOI) MOSFETs is known to have better properties than bulk counterparts in high-temperature environments.  For ruggedized electronic applications, these devices may operate in even higher temperatures than normal high-temperature operations.  In this project, SOI MOSFET characteristics under extremely high temperatures will be simulated using commercial numerical simulators, from which device characteristics will be obtained and analyzed.  The results of such investigations will be used in a research project for modeling high-temperature SOI MOSFETs.