E425: Engineering Design V   TCAD: Process and Device Simulation  

X. ZHOU

© 1997

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  Step 32: Simulated Structure    
 
Step 32: PSG deposition and densification: Deposit SiO₂: 7000 Å; P-doped: 10²⁰ cm^-3.  Densification: 10 min., 750->950 °C, N₂=3 SLM; 5 min., 950 °C, dry O₂=3 SLM; 20 min., 950 °C, steam  H₂=3 SLM, O₂=1.7 SLM; 5 min., 950 °C, dry N₂=3 SLM; 10 min., 950->750 °C, dry O₂=3 SLM.  Target: x_jn = 0.35 µm; x_jp = 0.6 µm.
 

Cross-Sectional View

Input Command

$step deposit_psg  deposition oxide thicknes=0.7 spaces=4 phos=1e20 concen   $step densify_psg  diffusion time=10 temp=750 t.final=950 inert   diffusion time=5 temp=950 dryO2   diffusion time=20 temp=950 f.H2=3 f.O2=1.7   diffusion time=5 temp=950 dryO2   diffusion time=10 temp=950 t.final=750 inert   $step extr_tox_psg  extract oxide thicknes x=9 prefix="tox_psgf " suffix="(?) um"  out.file=psg_dep:0_0.ext   extract oxide thicknes x=4 prefix="tox_psgn " suffix="(?) um"  out.file=psg_dep:0_0.ext   extract oxide thicknes x=14 prefix="tox_psgp " suffix="(?) um"  out.file=psg_dep:0_0.ext   $step extr_xj  select z=doping   extract silicon d.extr x=4 value=0 prefix="xj_nch " suffix="(0.35) um"  out.file=psg_dep:0_0.ext   extract silicon d.extr x=14 value=0 prefix="xj_pch " suffix="(0.6) um"  out.file=psg_dep:0_0.ext