E425: Engineering Design V   TCAD: Process and Device Simulation  

X. ZHOU

© 1997

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  Step 30: Simulated Structure    
 
Step 30: P+ S/D implant: Implant B; Dose: 5x10¹⁵ cm^-2; Energy: 40 KeV.  Target: x_j = 0.55 µm.
 

Cross-Sectional View

Input Command

$step P+ s/d_implant  implant boron dose=5e+15 energy=40   $step extr_Npeak  select z=boron   extract silicon val.extr x=14 maximum prefix="Bmax_psd " suffix=" cm**-3"  out.file=psd_impl:0_0.ext   $step extr_Nsurf  select z=boron   extract silicon val.extr x=14 distance=0 prefix="Bsur_psd " suffix=" cm**-3"  out.file=psd_impl:0_0.ext   $step extr_xj_psd  select z=doping   extract silicon d.extr x=14 value=0 prefix="xj_psd " suffix="(0.55) um"  out.file=psd_impl:0_0.ext