This PhD project is directed towards the development of compact models for advanced III-V material based devices, such as InGaAs and GaN based high electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs), with a focus on reliability, variability, and noise issues.  Reliability degradation (aging) and noise (temporal) affects the performance of devices in the course of operation and lifetime. These issues are dynamically dependent on the circuit operation and, hence, can be captured using physics-based compact models.  The research work also aims at capturing the device level variability (spatial noise) in the compact model.

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