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Solid State Electronics, Vol. 38 (6) (1995) pp. 1264-1266
© 1995 Elsevier Science B.V. All rights reserved.
Monte Carlo formulation of field-dependent mobility for AlxGa1 - xAs
Xing Zhou and Hong Siang Tan
School of Electrical and Electronic Engineering Nanyang Technological
University Nanyang Avenue, Singapore 2263, Republic of Singapore
Received 14 September 1994
Full text supplied by [ScienceDirect]
© Copyright
2001, Elsevier Science, All rights reserved.
Solid State Electronics, Vol. 45 (1) (2001) pp. 193-197
© 2001 Published by Elsevier Science Ltd. All rights
reserved.
PII: S0038-1101(00)00190-8
A physically-based semi-empirical effective mobility model for MOSFET compact
I-V
modeling
School of Electrical and Electronic Engineering, Nanyang Technological
University, Singapore 639798, Singapore
Received 25 November 1999; received in revised form 3 August 2000
Abstract
A physically-based effective mobility model is presented, which includes
Coulombic, phonon, and surface roughness scattering mechanisms. The model
is semi-empirical and consists of three physics-based fitting parameters
to be extracted with a single measurement of terminal current. The developed
model is shown to be more physical than the commonly-used empirical model,
and the doping dependence can be modeled after parameter extraction. The
model has been verified with excellent prediction to the experimental data
with broad bias and doping variations.
Keywords:
Effective mobility; MOSFET; Compact model
*Corresponding author. Tel.: +65-790-4532;
fax: +65-791-2687
Full text supplied by [ScienceDirect]
© Copyright
2001, Elsevier Science, All rights reserved.
Solid State Electronics, Vol. 45 (3) (2001) pp. 507-510
© 2001 Elsevier Science Ltd. All rights reserved.
PII: S0038-1101(01)00035-1
Threshold voltage definition and extraction for deep-submicron MOSFETs
School of Electrical and Electronic Engineering, Nanyang Technological
University, Block S1, Singapore 639798, Singapore
Received 5 February 2000; received in revised form 3 November 2000
Abstract
The subtle difference in MOSFET threshold voltage between the two popular
definitions, maximum-gm and constant current, is investigated
in the deep-submicron regime. The result pinpoints to the importance of
the lateral-field effect in linear region at very short gate length, and
further supports the combined definition known as the "critical current
at linear threshold" method, which includes short-channel effects while
retaining the simplicity and consistency of the constant-current method.
*Corresponding author. Tel.: +65-790-4532;
fax: +65-791-2687
Full text supplied by [ScienceDirect]
© Copyright
2001, Elsevier Science, All rights reserved.