 |
Results:
Journal or Magazine = JNL
Conference = CNF Standard = STD
|
1 MOSFET
subthreshold compact modeling with effective gate overdrive
Khee Yong Lim; Xing Zhou
Electron Devices, IEEE Transactions
on , Volume: 49 Issue:
1 , Jan 2002
Page(s): 196 -199
[Abstract]
[PDF
Full-Text] JNL
|
|
2 Unified
MOSFET compact I-V model formulation through physics-based effective transformation
Xing Zhou; Khee Yong Lim
Electron Devices, IEEE Transactions
on , Volume: 48 Issue:
5 , May 2001
Page(s): 887 -896
[Abstract]
[PDF Full-Text]
JNL |
|
3 A
physically-based semi-empirical series resistance model for deep-submicron
MOSFET I-V modeling
Lim, K.Y.; Zhou, X.
Electron Devices, IEEE Transactions
on , Volume: 47 Issue:
6 , June 2000
Page(s): 1300 -1302
[Abstract]
[PDF Full-Text]
JNL
|
|
4 Exploring
the novel characteristics of hetero-material gate field-effect transistors
(HMGFETs) with gate-material engineering
Xing Zhou
Electron Devices, IEEE Transactions
on , Volume: 47 Issue:
1 , Jan. 2000
Page(s): 113 -120
[Abstract]
[PDF Full-Text]
JNL
|
|
5 A
general approach to compact threshold voltage formulation based on 2D numerical
simulation and experimental correlation for deep-submicron ULSI technology
development [CMOS]
Xing Zhou; Khee Yong Lim; Lim,
D.
Electron Devices, IEEE Transactions
on , Volume: 47 Issue:
1 , Jan. 2000
Page(s): 214 -221
[Abstract]
[PDF Full-Text]
JNL
|
|
6 A
new "critical-current at linear-threshold" method for direct extraction
of deep-submicron MOSFET effective channel length
Zhou, X.; Lim, K.Y.; Lim, D.
Electron Devices, IEEE Transactions
on , Volume: 46 Issue:
7 , July 1999
Page(s): 1492 -1494
[Abstract]
[PDF Full-Text]
JNL
|
|
7 A
simple and unambiguous definition of threshold voltage and its implications
in deep-submicron MOS device modeling
Zhou, X.; Lim, K.Y.; Lim, D.
Electron Devices, IEEE Transactions
on , Volume: 46 Issue:
4 , April 1999
Page(s): 807 -809
[Abstract]
[PDF Full-Text]
JNL
|
|
8 An
experimentally-based DC model for the Bi-MOS structure and its adaptation
to a circuit simulation environment
Rofail, S.S.; Yeo, K.S.; Chew,
K.W.; Zhou, X.; Tang, T.W.
Electrical and Computer Engineering,
1998. IEEE Canadian Conference on , Volume:
1 , 1998
Page(s): 37 -40
vol.1
[Abstract]
[PDF
Full-Text] CNF
|
|
9 A
predictive semi-analytical threshold voltage model for deep-submicron MOSFET's
Lim, K.Y.; Zhou, X.; Lim, D.;
Zu, Y.; Ho, H.M.; Loiko, K.; Lau, C.K.; Tse, M.S.; Choo, S.C.
Electron Devices Meeting, 1998.
Proceedings. 1998 IEEE Hong Kong ,
1998
Page(s): 114 -117
[Abstract]
[PDF
Full-Text] CNF
|
|
10 Numerical
investigation of subpicosecond electrical pulse generation by edge illumination
of silicon transmission-line gaps
Xing Zhou; Tianwen Tang; Lee
Seng Seah; Chong Jin Yap; Seok Cheow Choo
Quantum Electronics, IEEE Journal
of , Volume: 34 Issue:
1 , Jan. 1998
Page(s): 171 -178
[Abstract]
[PDF Full-Text]
JNL
|
|
11 A
novel hetero-material gate (HMG) MOSFET for deep-submicron ULSI technology
Xing Zhou; Wei Long
Electron Devices, IEEE Transactions
on , Volume: 45 Issue:
12 , Dec. 1998
Page(s): 2546 -2548
[Abstract]
[PDF Full-Text]
JNL
|
|
12 A
dynamic timing delay for accurate gate-level circuit simulation
Tang, T.; Zhou, X.
Circuits and Systems, 1996., IEEE
39th Midwest symposium on , Volume:
1 , 1996
Page(s): 325 -327
vol.1
[Abstract]
[PDF
Full-Text] CNF
|
|
13 Numerical
physics of subpicosecond electrical pulse generation by nonuniform gap
illumination
Xing Zhou
Quantum Electronics, IEEE Journal
of , Volume: 32 Issue:
9 , Sept. 1996
Page(s): 1672 -1679
[Abstract]
[PDF Full-Text]
JNL
|
|
14 Regional
Monte Carlo modeling of electron transport and transit-time estimation
in graded-base HBT's
Xing Zhou
Electron Devices, IEEE Transactions
on , Volume: 41 Issue:
4 , April 1994
Page(s): 484 -490
[Abstract]
[PDF Full-Text]
JNL
|
|
