De-embedding Length-Dependent Edge-Leakage Current in Shallow Trench Isolation Submicron MOSFETs

Xing Zhou and Khee Yong Lim

Figures

Fig. 1 | Fig. 2 | Fig. 3

Fig-1

Fig. 1 Measured (symbol) and modeled (line) Ids - Vgs curves at the indicated length and bias conditions with minimum and maximum threshold voltages.  The full Vt - Ldrawn data [14] is shown in the inset.

Fig-2

Fig. 2 Ids - Vgs characteristics for the L = 0.2-mm device, showing the modeled results before [crosses, Eq. (1)] and after [lines, Eq. (3)] Iedge extraction, compared with the measured data (symbol).

Fig-3(a)

Fig-4(b)

Fig. 3 Prediction of the measured Ids (symbols) by the modeled Ids (solid lines), which is decomposed into Imos (dashed lines), Iedge (dotted lines), and Idiode (dash-dotted lines) for (a) different channel lengths at fixed biases and (b) different substrate biases at a fixed channel length.