A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling

Khee Yong Lim*, Xing Zhou*, and David Lim†

*School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
Fax: (65) 791-2687.  Email: exzhou@ntu.edu.sg
†Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406

Figures

Fig. 1 | Fig. 2 | Fig. 3 | Fig. 4

Fig-1

Fig. 1 Measured (symbols) and modeled (lines) saturation current vs. gate length for different supply voltage Vdd (with Vgs = Vds = Vdd). Only the Vdd = 2.5 V data are used for µ0 and Rs extraction. All others are predictions by the model.

Fig-2

Fig. 2 Measured (symbols) and modeled (lines) saturation current vs. gate length for different substrate bias Vbs. The Vbs dependency is modeled by the parameters in the Vth model.

Fig-3

Fig. 3 Measured (symbols) and modeled (lines) saturation current vs. gate length for different Vth-adjustment implant dose F. The inset shows the extracted linear correlation between Ns and F extracted from the Vth model.

Fig-4

Fig. 4 Measured (symbols) and modeled (lines) saturation current vs. gate length for different punchthrough implant energy E. The inset shows the extracted linear correlation between Ns and E extracted from the Vth model.