A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

W. Qian, X. Zhou, Y. Wang, and K. Y. Lim

School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

Figures

Fig. 1 | Fig. 2 | Fig. 3 | Fig. 4

Fig-1

Fig. 1 Schematic diagram of MOSFET device L: the channel length of uniform doping. ys: the point of carrier velocity saturation.

Fig-2

Fig. 2 Channel surface potential vs. channel position y for three gate lengths.

Fig-3a (a)
Fig-3b (b)

Fig. 3 Calculated and MEDICI simulated drain current IDS as a function of gate voltage VGS.

Fig-4a (a)
Fig-4b (b)

Fig. 4 Calculated drain current IDS as a function of gate voltage VGS with or without overshoot (a): VDS=2V (b): VDS=4V.