A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET's Technology Development with Process Correlation

Xing Zhou and Khee Yong Lim

School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
Phone: (65) 790-4532.  Fax: (65) 791-2687. Email: exzhou@ntu.edu.sg

Figures

Fig. 1 | Fig. 2 | Fig. 3 | Fig. 4

Fig-1a (a)
Fig-1b (b)

Fig. 1 Figure 1: (a) Ids -Vgs (left: log; right: linear) and (b) Ids- Vds plots for the 0.24-µm device (symbols) compared to BSIM (crosses).

Fig-2a (a)
Fig-2b (b)

Fig. 2 (a) Ids -Vgs (left: log; right: linear) and (b) Ids- Vds plots (lines) for five devices (symbols) compared to BSIM (crosses).

Fig-3

Fig. 3 Predicted saturation currents Ion -Ldrawn (lines) through correlation to long-channel Vt with implant dose.

Fig-4

Fig. 4 Predicted leakage currents Ioff -Ldrawn (lines) through correlation to long-channel Vt and Is0.