Physics-Based Threshold Voltage Modeling with Reverse Short Channel Effect

Khee Yong Lim, Xing Zhou, and Yuwen Wang

School of Electrical & Electronic Engineering, Nanyang Technological University,
Nanyang Avenue, Singapore 639798. exzhou@ntu.edu.sg

Figures

Fig. 1 | Fig. 2 | Fig. 3 | Fig. 4 | Fig. 5 | Fig. 6 | Fig. 7

Fig-1

Fig. 1 MOSFET with both vertical and horizontal non-uniform doping profiles.

Fig-2

Fig. 2 MEDICI simulated doping profiles across MOSFET channel for Lg = 0.24, 0.34, 0.5 and 1 µm.

Fig-3

Fig. 3 Effective channel doping against channel length for three different characteristic lengths. Solid lines: proposed RSCE model; Dashed lines: hyperbolic cosine model [7].

Fig-4 (a)

(b)

Fig. 4 The proposed RSCE threshold voltage against channel length for (a) lb variation and (b) Npile variation.

Fig-5 (a)

(b)

Fig. 5 The empirical hyperbolic cosine RSCE threshold voltage against channel length for (a) lb variation and (b) Npile variation.

Fig-6 (a)

(b)

Fig. 6 Threshold voltage against channel length for three different characteristic lengths. (a) proposed RSCE model; (b) hyperbolic cosine model [7]. Symbols: MEDICI data, Lines: model data.

Fig-7 (a)

(b)

Fig. 7 Threshold voltage for various substrate biases. Symbols: experimental data, Lines: model data. (a) Vds = 0.1V; (b) Vds = 2.5V.