MOSFET Subthreshold Compact Modeling with Effective Gate Overdrive

Khee Yong Lim, Member, IEEE, and Xing Zhou, Senior Member, IEEE

Figures

Fig. 1 | Fig. 2 | Fig. 3 | Fig. 4

Fig-1

Fig. 1 Continuous effective gate/drain voltage product (solid lines) by (18) joining the ones in strong inversion (circles) by (8b) and subthreshold (triangles) by (9b), compared with the previous model (dotted lines) by (7b), with three values of Voff as indicated.

Fig-2a

Fig. 2 Continuous effective gate/drain voltage product (solid lines) by (18) joining the ones in strong inversion (circles) by (8b) and subthreshold (triangles) by (9b), compared with the previous model (dotted lines) by (7b), with different drain/body biases as indicated at a fixed value of Voff.

Fig-3

Fig. 3 Continuous effective gate/drain voltage product (solid lines) by (18) joining the ones in strong inversion (circles) by (8b) and subthreshold (triangles) by (9b), compared with the previous model (dotted lines) by (7b), with different gate lengths as indicated at a fixed value of Voff.

Fig-4a

Fig. 4 Measured (symbols) and modeled (lines) Ids - Vgs characteristics (left axis) of the 0.2-mm device at the indicated bias conditions, together with the corresponding transconductance/current ratios (right axis).  The inset shows the measured (circle) and modeled (triangle) subthreshold swing vs. gate length, together with the BSIM3v3 prediction (dashed line).