A Novel Hetero-Material Gate (HMG) MOSFET for Deep-Submicron ULSI Technology

X. Zhou, Member, IEEE, and W. Long

Figures

Fig. 1 | Fig. 2 | Fig. 3 | Fig. 4 | Fig. 5

Fig-1

Fig. 1 Structure of the HMG-MOSFET.

Fig-2

Fig. 2 Comparison of the linear (solid lines) and saturation (dotted lines) threshold voltages against channel length (circles) or gate length (triangles).

Fig-3

Fig. 3 Comparison of the DIBL voltages as a function of the drain bias for each channel length.

Fig-4

Fig. 4 The leakage currents (at Vds = 0.05 or 3 V) against the saturation current (each pair corresponds to a different channel length).  One pair of Ion/Ioff for the HMG-MOSFET with Lg/Ls = 0.15/0.1 and channel doping Nch = 5x1016 cm–3 is also shown as a comparison.

Fig-5a (a)
Fig-5b (b)

Fig. 5 (a) Threshold voltages as a function of the Lg/Ls ratio, and  (b) the corresponding leakage current vs. saturation current.