Regional Monte Carlo modeling of electron transport and transit-time estimation in graded-base HBT's
- Xing Zhou
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
This Paper Appears in :
Electron Devices, IEEE Transactions on
on Pages: 484
- 490
| April 1994 |
Vol. 41 |
Issue: 4 |
ISSN: 0018-9383 |
References Cited: 41
CODEN: IETDAI
Accession Number: 4674453
Abstract:Steady-state electron transport in graded-base heterojunction bipolar transistors is investigated using a regional ensemble Monte Carlo approach. Besides the graded band and scattering parameters already incorporated in the particle model, emitter-base and collector-base junctions are also considered in the boundary conditions for carrier injection/absorption. It is shown that optimum base transit times are directly related to the maximum average velocities, which occur at different base width-composition combinations. It also illustrates a general approach to studying electron transport in graded-band devices.<>
Subject Terms:heterojunction bipolar transistors; semiconductor device models; S-parameters; Monte Carlo methods; boundary-value problems; carrier lifetime; carrier mobility; regional ensemble Monte Carlo approach; Monte Carlo modeling; electron transport; transit-time estimation; graded-base HBT; heterojunction bipolar transistors; graded band parameters; scattering parameters; particle model; emitter-base junctions; collector-base junctions; boundary conditions; carrier injection; carrier absorption; maximum average velocities; graded-band devices