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Technology-Based Predictive Compact Model Development for Next Generation CMOSAbstract
This talk gives an overview of the Research Customization Project sponsored by Semiconductor Research Corporation with the support of Chartered Semiconductor Manufacturing. It will present the key features and approaches in the development of a unified regional threshold-voltage (Vt)-based compact model (Xsim) for deep-submicron CMOS. The Vt is retained in the core model as it characterizes a given technology whereas care is taken to maintain model symmetry. The regional approach allows physics-based formulations in the respective regions being modeled whereas clever use of interpolation/smoothing functions maintains single-piece equations with continuity and scalability. Model parameters have minimum correlations that require only one-iteration extraction using minimum data, and accuracy–simplicity can be traded off within the same parameter set. This provides the basis for next generation technology prediction.