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Hetero-Material Gate Field-Effect Transistors (HMGFET's)Abstract
The novel characteristics of a new MOSFET structure, namely, the hetero-material gate field-effect transistor (HMGFET) as well as its potential application to deep-submicron ULSI technology, are explored. The 2-D numerical simulations reveal that the threshold-voltage roll-off can be compensated and controlled by the addition of an "asymmetric spacer" material to the source side of the gate, which can be "engineered" by a proper choice of the spacer material and thickness. Simultaneous suppression of short-channel effects and enhancement in transport efficiency can be expected. The unique features of the HMGFET should prompt great incentive for experimental exploration, which demonstrate the potential in breaking the barrier of conventional MOS scaling limit.
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