Citation and Abstract Page

An experimentally-based DC model for the Bi-MOS structure and its adaptation to a circuit simulation environment
- Rofail, S.S.; Yeo, K.S.; Chew, K.W.; Zhou, X.; Tang, T.W.
Editor(s): Hornsey, R.
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

This Paper Appears in :
Electrical and Computer Engineering, 1998. IEEE Canadian Conference on

on Pages: 37 - 40 vol.1

This Conference was Held : 24-28 May 1998

1998 Vol. 1 ISBN: 0-7803-4314-X

IEEE Catalog Number: 98TH8341
Total Pages: 2 vol. xliii+939
References Cited: 4
Accession Number: 6083756

Abstract:

This paper presents an experimentally-based model that can accurately describe the hybrid-mode operation of deep submicron LDD p-MOSFETs in a circuit environment. Unified equations for the MOS, bipolar, and space charge currents of the Bi-MOS structure were derived and later adapted to meet the circuit simulation requirements.

Subject Terms:

BIMOS integrated circuits; experimentally-based model; DC model; Bi-MOS structure; circuit simulation environment; hybrid-mode operation; space charge currents; bipolar currents; MOS currents; deep submicron LDD p-MOSFET; XSIM model