Selected Chips Gallery

chip	year and process	description
	2015 AMS 0.35um CIS	Multiple Project Wafer: Light Filed Sensor, Ambient Light Sensor, Dynamic Vision Sensor and Low Power Image Sensor Author:  Yu Hang, Guo Menghan, Liu Lifen, Vigil Varghese, Huang Jing and Wang Yue
	2014 AMS 0.35um CIS	Light Filed Sensor Author:  Vigil Varghese
	2014 AMS 0.35um CIS	Testing Structure for CMOS Readout Circuits of Mid-wave Infrared Image Sensor Author:  Guo Menghan
	2014 AMS 0.35um CIS	CMOS Image Sensor for Star Tracker Author:  Qian Xinyuan
	2014 AMS 0.35um CIS	CMOS Imager with Low-Power Column-Parallel ADC Author:  Liu Lifen
	2014 GlobalFoundries 65nm	Data Management IC for Space Applications Author:  Guo Menghan
	2014 TSMC 0.18um CIS	Anti-vibration Time-Delay-Integration CMOS Image Sensor Author:  Yu Hang
	2013 GlobalFoundries 65nm	Multi-project testing chip: TDI, Light Filed, Star Tracker and  Motion Detection Author:  Yu Hang, Vigil Varghese, Qian Xinyuan, Zhang Xiangyu
	2012 GlobalFoundries 65nm	Light Filed Sensor Author:  Vigil Varghese
	2012 X-Fab SOI 1um	Image Sensor for harsh environment (high temperature) Author:  Yu Hang
	2012 GlobalFoundries 65nm	Characterization chip for building blocks designed for harsh environment Author:  Gibran Limi Jaya, Chen Gang
	2012 GlobalFoundries 0.18um	Image sensor for star tracker Author:  Qian Xinyuan
	2012 GlobalFoundries 0.18um	Asynchronous full-array-parallel motion detection image sensor with analog domain clustering Author:  Zhang Xiangyu
	2012 GlobalFoundries 0.18um	2nd Generation asynchronous full-array-parallel ultra-fast motion detection image sensor 　 Author:  Yang Yongkui
	2011 TSMC 0.18um CIS	Radiation-tolerant image sensor for space applications (version 2) The sensor was designed for use in space and avionics systems.  A number of techniques were employed to address space-radiation induced effects such as leakage current, SEU and Vt shift.  Other features include: dynamic gain/exposure control, temperature compensation. 　 Author:  Yu Hang
	2011 TSMC 0.35um	Asynchronous full-array-parallel ultra-fast motion detection image sensor 　 An 80x80 array and ech pixel can individually monitor the change in light intensity and reports an event if a threshold are reached. The output of the sensor is not a frame, but a stream of asynchronous digital events. Therefore the speed of the sensor is not limited by any traditional concept such as exposure time, frame rate. Authors:  Aung Myat Thu Linn,  Do Anh Tuan
	2011 TSMC 0.35um	Asynchronous full-array-parallel ultra-fast motion detection image sensor A 64x32 array with in-pixel analog counters. Each pixel can individually monitor the change in light intensity and reports an event if a threshold are reached. Authors:  Aung Myat Thu Linn,  Do Anh Tuan
	2011 TSMC 0.18um CIS	Radiation-tolerant image sensor for space applications The sensor was designed for use in space and avionics systems.  A number of radiation-tolerant techniques were employed to design the pixel and readout circuits. In addition, the chip integrates temperature compensation circuits to deal with the dramatic temperature fluctuations. 　 Authors:  Qian Xinyuan, Yu Hang, Zhao Bo
	2010  UMC 0.18um	64x64 motion detection sensor with auto-zoom capability The chip integrates temporal difference motion detection together with cluster-based size and position calculation . Once the motion object is located, the sensor will switch to window mode and takes a zoomed image of the object-of-interest. Authors:  Zhao Bo, Zhang Xiangyu
	2009  AMIS 0.5um	64x64 address event temporal difference image sensor with on-chip UWB transmitter The chip is capable of calculating frame-differencing at the focal-plane and delivering data over wireless link. An on-chip encoder will first encode the on-chip clock and the 1-bit data from each pixel and then an UWB transmitter will send the data to the receiver.
	2008  MIT Lincoln Lab 0.15um 3D SOI	64x96 3D integrated feature-extracting image sensor This is a smart image sensor which can operate in 3 modes: intensity, temporal diff and contour. It can run at a frame rate of 2000frames/s but only consumes less than 0.3mw power (by simulation).
	2008 AMIS 0.5um	64x64 address event temporal difference image sensor Each pixel has an analog memory to store the pixel’s voltage of previous frame and it’s compared with the current frame’s voltage. Only when the difference reaches to an tunable threshold voltage, this pixel will send an event to the receiver.
	2006 Alcatel 0.35um	64x64 TFS imager with on-chip smooth BP adaptive quantizer and QTD compression This chip implements a CMOS imager, integrating a low power on-chip image compression scheme, which relies on a novel architecture combining boundary adaptive quantization and an efficient on-line quadrant tree decomposition (QTD).
	2005 Alcatel 0.35um	128x128 arbitrated TFS imager with novel AER techniques and Histogram Equalization processing The chip implements a time-to-first spike arbitrated imager with asynchronous Address Event Representation based readout scheme. A number of novel techniques were integrated to reduce the timing errors associated to AER-type imagers.
	2005 UMC 0.18um	Testing structure of a NPNP Triple Well photodiode and readout circuit An array of triple-well photodiodes acting as the RGB color detectors based on the strong dependence of photon penetration depth on its wavelength. The currents of the three junctions are processed by a Gilbert normalizer before readout.
	2004 Alcatel 0.35um	Testing structure of a reconfigurable counter/memory circuit for spiking pixel.  The pixel contains a novel counter/memory circuit, which combines dynamic and static memory cells to achieve compactness.