ZHANG Dao Hua
Associate Professor of School of Electrical & Electronic Engineering

Phone: (65) 6790 4841, Fax: (65)6793 3318 Office: S2-B2a-10 Email: edhzhang@ntu.edu.sg
Biography
D. H. Zhang received M.S degree from Shandong University, China, and Ph.D. degree from the University of New South Wales, Australia. He joined the School of Electrical and Electronic Engineering, Nanyang Technological University as a lecturer in 1991 and was promoted to Senior Lecturer in 1995 and Associate Professor in 1999. Before this, he worked as a Postdoctoral Research Associate in School of Physics, the University of New South Wales. He has authored and co-authored over 110 journal papers, presented over 120 conference papers and filed three patents. He has been a senior member of IEEE since 1997 and a Fellow of Institute of Physics since 2006. He has served as the editor and guest editor of 8 international journals.
Research Interest
Semiconductor materials, devices and physics; Quantum well, wire and dot structures and devices ; New nano-scaled materials and devices for low and high temperature infrared photodetection; Metamaterials and applications.
Selected Research Projects
  • Development of InSbN alloys and other dilute nitrides for infrared photodetection.
  • Metamaterials and applications.
Selected Publications
  • D. H. Zhang, W. Liu, Y. Wang, X. Z. Chen, J. H. Li, Z. M. Huang and Sam Zhang, “InSbN alloys prepared by two-step ion implantation for infrared photodetection”, Applied Physics Letter, 93, 131107 (2008)..
  • D. H. Zhang, W. Liu, L. Sun, W. J. Fan, S. F. Yoon and S. Z. Wang, “Transverse      electric dominant intersubband transition in Si-doped GaInAsN/GaAs quantum wells”, Journal of Applied Physics, 99, 043514(1- 4), 2006.
  • Y.L. Yong, D. H. Zhang, C.Y. Li, S.Y. Wu, P.D. Foo, "Improving electrical performance of Cu/porous ultra-low k dielectrics single damascene lines", Electronics Letters, 40 (12), 729-730, 2004.
  • L. Sun, D. H. Zhang, "Study of InGaAsP/InP multiple quantum well grown by solid source molecular beam epita xy", Journal of Vacuum Science and Technology, B21, 1940-1944, 2003.
  • W. Shi, D. H. Zhang, T. Osotchan, "Si x-band approach to the effects of doping on energy dispersion in p-type strained In0.15Ga0.85As/Al0.33Ga0.67As quantum well structures", IEEE Journal of Quantum Electronics, 36 (7), 2000.
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