Developing New Germanosilicide/Germanide Materials And Processes For Futute Nano-Scale Mosfet Devices

I-9: Developing new germanosilicide/germanide materials and processes for futute nano-scale mosfet devices

Lee Pooi See, School of Materials Science and Engineering, NTU, Chi Dong Zhi, Institute of Materials Research and Engineering, Pey Kin Leong, School of Electrical and Electronic Engineering, NTU

Abstract

The main objective is to develop new germanosilicide and germanide materials and their processes for the applications to future nano-scale Si(Ge)- and Ge-based CMOS devices. Our research focuses on the material characterization of the relevant germanosilicide and germanide systems, combined with engineering of material properties, device fabrication, process integration, and characterization. NiSi(Ge) with low Ge content (e.g., <30%) has been studied with the proposed solution to suppress the degradation process in the NiSi(Ge). Formation and characterization of Er digermanosilicide on Si and Si(Ge) with low Ge content (e.g., <30 %) is being investigated for Schottky CMOS application in the nanoscale devices.