Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together.  The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors.  The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation, which are largely categorized into the following groups:

• Intrinsic Models

• Bulk MOSFET
• SOI MOSFET (partial-/full-depletion)
• Multiple-Gate FET (DG/TG/GAA)
• High-Voltage/LDMOS
• Thin-Film Transistor (TFT)
• Schottky-Barrier/Tunneling FET (SB-FET/TFET)
• Bipolar/Junction (BJT/HBT/SiGe/JFET)
• RF/noise

• Extrinsic/Interconnect Models

• Parasitic elements
• Passive device
• Diode
• Resistor
• ESD
• Interconnect

• Atomic/Quantum Models

• Ballistic device
• Carbon-Nanotube (CNFET)
• Organic FET

• Statistical Models

• Statistical/variability
• Reliability/hot carrier
• Numerical/TCAD/table-based

• Multi-Level Models
• Subcircuit model
• Gate/block model
• Behavioral model

• Model Extraction and Interface

• Parameter extraction and optimization
• Model-simulator interface
• Model standardization

The abstracts online submission deadline: 11 December 2009.

See Microtech website on information for authors:
http://www.techconnectworld.com/World2010/participate/authors/

See Microtech website for conference registration: