WANG Hong
Assiociate Professor of School of Electrical & Electronic Engineering
Division of Microelectronics

Phone: (65) 6790 4358, Fax: (65) 6792 0415
Office: S2.1-B2-12
Email: ewanghong@ntu.edu.sg

Biography

Wang Hong received the B. Eng. Degree from Zhejiang University, P. R. China, in 1988, and M. Eng. and Ph. D. degrees from the Nanyang Technological University (NTU), Singapore, in 1998 and 2001, respectively. From 1988 to 1994, he was with the Institute of Semiconductors, Chinese Academy of Sciences developing InP-based OEIC’s. From 1994 to 1995, he was a royal research fellow at British Telecommunications Laboratories, Ipswich, U. K., working on the development of 0.25 um InP-based HFETs using E-beam lithography. Since 1996, he joined the Microelectronics Centre at Nanyang Technological University as a research associate, where he is currently an assistant professor. In 2000, he demonstrated the world first metamorphic InP/InGaAs double heterojunction bipolar transistor on GaAs substrate. He has authored and co-authored more than 100 technical papers.

Research Interest

III-V compound and Si-based semiconductor device physics, fabrication technology and characterization.

Selected Research Projects

  • Bandgap Engineering Using InN-Related Compounds for Next Generation Heterojunction Bipolar Transistor (HBT) On GaAs Substrate, S$350,000, sponsored by Science & Engineering Research Council of Singapore.
  • Development of Indium Phosphide-based MMIC Transistors, S$453,000, sponsored by Defense Science and Technology Agency, Singapore.
  • Indium phosphide metamorphic heterojunction bipolar transistors technology, S$474,000, sponsored by Ministry of Education and Agency for Science, Technology and Research of Singapore.

Selected Publications

  • R. Zeng and H. Wang , “Effect Of FN stress and gate oxide breakdown on high frequency noise characteristics In deep-submicron NMOSFET's,” IEEE Electron Device Lett., vol.26, no.6, pp.390-393, 2005.
  • W.-P. Neo and H. Wang, “Unified Explanation for Suppressed Electron Ionization Coefficient and its Weak Temperature Dependence in InGaP,” Appl. Phys. Lett., vol.85, no.15, pp.3119-3121, 2004.
  • H. Wang , H. Yang, K. Radhakrishnan, T. K. Ng and W. C. Cheong, “The Influence of Emitter Material on Silicon Nitride Passivation Induced Degradation in InP-based Heterojunction Bipolar Transistors (HBTs),” IEEE Trans. Electron Devices, vol.51, no.1, pp.8-13, 2004.
  • H. Wang , H. Yang, W.-P. Neo, K. Radhakrishnan, and C. L. Tan, “Temperature Dependence of Avalanche Multiplication in InP-Based Heterojunction Bipolar Transistors with InGaAs/InP Composite Collector: Device Characterization and Physics Model,” IEEE Trans. Electron Devices, vol.50, no.12, pp.2335-2343, 2003.
  • H. Wang and G. I. Ng, “A Novel Technology to Form Self-aligned Emitter Ledge for Heterojunction Bipolar Transistors,” IEEE Electron Device Lett., vol.24, no.10, pp.628-630, 2003.