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V. L. Lo, K. L. Pey, C. H. Tung and X. Li, “Multiple Digital Breakdowns and Its Consequence on Ultrathin Gate Dielectrics Reliability Prediction” has been accepted for oral presentation in IEEE IEDM, which will be held in Washington, DC USA from December 10-12, 2007. IEEE IEDM has been the world’s main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices over the last 53 years. In this paper, digital fluctuation of post-breakdown gate leakage is modeled by defect transformation in the percolation path. At nominal operating voltages, multiple percolation paths are likely to be formed during digital breakdown, affecting the post-breakdown reliability assessment.

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