The Virtual Wafer Fab Technology

E425: Engineering Design V (94 KB) 

• Course Objectives
• What Is Engineering Design
• Engineering Design V
• TCAD: Emulating Wafer Fabrication and Device Characterization
• How to Learn This Subject
• Theme of the Course
• Summary notes (2001/02)

1997/98
• Course Outline
• Course Schedule
• Assessment

1998/99
• Course outline, schedule, assessment 

1999/2000
• Course schedule 
• Course assessment 

2000/01
• Course schedule/assessment 

2001/02
• Course schedule/assessment 

2002/03
• Course schedule/assessment 

2003/04
• Course schedule/assessment

2004/05
• S1: Course schedule/assessment 
• S2: Course schedule 

2005/06
• S1: Course schedule/assessment 

2006/07
• S1: Course schedule/assessment 
• S2: Course schedule/assessment 

2007/08
• S1: Course schedule 
• EE4613 Notes 

2008/09
• S1: Course schedule 
• EE4613 Notes 

2009/10
• S1: Course schedule 

EE4613 Notes 

Introduction to Physical Simulation and TCAD (322 KB) 

• Role of Computer Experiment
• A Word About Modeling
• Driving the Simulation Vehicle
• VLSI Process Development
• Three Ways of Obtaining Device Characteristics
• TCAD -- Physical Simulation
• The Driving Force -- Deep Submicron Technology
• Three Major Stages of Physical Simulation
• The Simulation Vehicle
• Process Simulation
• Device Simulation
• Technology Characterization
• Circuit Simulation
• Device vs Process Simulation
• Device vs Circuit Simulation
• Role of Process and Device Simulation
• Design of Experiment (DOE)
• Response Surface Modeling (RSM)
• Virtual Device Fabrication
• TCAD Tools from Technology Modeling Associates
• Simulator Accuracy
• General Tips on Using CAD Tools

CMOS Process Flow and Device Design (205 KB) 

• 2-µm N-Well CMOS Process Steps 
• Major Process Steps -- A Simplified View
• Masking and Photolithography
• CMOS Device Design Considerations
• Mask Design Considerations
• Well Design Considerations (1)
• Well Design Considerations (2)
• Source/Drain Considerations
• Threshold Considerations -- Definition
• Threshold Considerations -- Extraction
• Threshold Extraction from Simulation
• Threshold Design by Simulation
• Threshold Design Considerations
• Relate Circuit/Device Performance to Process Variations
• Example: Unity Current Gain Cutoff Frequency
• Two-terminal MOS with gate-to-substrate bias 
• Short-Channel Effect -- Vt Roll-off 
• Threshold Voltage Definition -- Icrit@Vt0  (Reference: )
• Electrostatic Integrity   (CMOS scaling )

TSUPREM-4: Process Simulation (276 KB) 

• The Essence of Process Simulation
• Schematic Representation of Process Simulation
• The Simulated Structure
• TMA Command Line Language
• Grid in TSUPREM-4
• Structure Initialization
• Summary: Mesh Generation Parameters
• Major Physical Models
• Diffusion, Oxidation, and Silicidation
• Ion Implantation
• Deposition
• Masking, Exposure and Development of Photoresist
• Etching
• Models and Coefficients
• Electrical Calculation and Parameter Extraction
• Data Post-Processing
• Selecting a Quantity to be Printed/Plotted
• "Proper" Use of Process Simulator

MEDICI: Device Simulation (276 KB)

• Basic Ingredients in Device Simulation
• Device Characterization
• Basic Semiconductor Equations
• Grid in MEDICI
• Grid Specification
• Three Ways of Initial Mesh Generation
• Major Physical Models
• Mobility Models
• Choice of Mobility Models
• Boundary Conditions
• Solution Specification
• Discretization
• DC Analysis
• Parameter Extraction
• Data Post-Processing
• Input and Output
• Documentation and Control
• Interfacing with TSUPREM-4
• Discrepancies Between Simulation and Measurement

TMA WorkBench (TWB): The Virtual IC Factory (182 KB) 

• WorkBench Structure
• WorkBench Project and Libraries
• WorkBench Experiments
• WorkBench Modules
• WorkBench Drivers
• WorkBench Variables and Wafer Components
• WorkBench Toolkit
• WorkBench Command Builder
• WorkBench Run Table
• Wafer State and Simulation Status
• Creating a Driver
• Creating a Tool