E425:
Engineering Design V
TCAD: Process and Device Simulation
Design Experiments
TWB | VWF | VDC
| VPI | MFL
WorkBench (TWB)
Virtual Wafer Fabrication (VWF)
1996/97
-
VWF - Complete TSUPREM-4 deck for the 2-µm
N-Well CMOS process
1997/98
-
Vt_E_D - Process split with different Vt implant
dose and energy
1998/99
-
VWF_dose - Process split with different Vt implant
dose
Virtual Device Characterization (VDC)
1996/97
-
VDC - Complete MEDICI/AURORA deck for I-V characterization,
parameter extraction, and SPICE simulation
-
NMOS - Detailed Id-Vg and Id-Vd electrical characterization,
with all the solutions saved (click
to see the results)
-
Nmos-IdVg - Effect of different device parameters
on the Id-Vg characteristics
1997/98
-
VDC - Device design parameter visualization and target
optimization with different Vt implant dose and energy (click
to see the results)
1998/99
-
VDC_dose - Device simulation on the three different
Vt implant dose wafers
Virtual Process Integration (VPI)
1996/97
-
VPI - Complete TSUPREM-4/MEDICI experiment with splits
of process variations (click
to see the results)
-
Gate-ox - Effect of gate oxidation time on the
device I-V characteristics
-
Vt-dose - Effect of threshold implant dose on
the device I-V characteristics
1998/99
-
VPI_dose - Process integration and electrical
characterization for devices with different gate length for each of the
three different Vt implant dose wafers
Experimental Device from MicroFabrication Lab (MFL) 
-
NMOS - Measured 2µm NMOS Id-Vd characteristics
-
NMOS - Measured 1.2µm NMOS Id-Vd
characteristics
-
PMOS - Measured 2µm PMOS Id-Vd characteristics
