Referred Journals

2004
1. W. S. Koh and L. K. Ang, "Simulation of high current field emission from vertically well-aligned metallic carbon nanotubes," Int. J. Nanosci., Vol. 3, No. 4-5, pp. 677-684, 2004.
2. L. K. Ang, Y. Y. Lau, and T. J. T. Kwan, "Simple derivation of quantum scaling in Child-Langmuir law," IEEE Trans. Plasma Sci., vol. 32, pp. 410, 2004.
3. H. S. Djie, T. Mei, J. Arokiaraj, C. Sookdhis, S. F. Yu, L. K. Ang, and X. H. Tang, "Experimental and Theoretical Analysis of Argon Plasma Enhanced Quantum Well Intermixing", IEEE J. Quantum Electron., vol. 40, pp. 166, 2004.

 
4. J. Huang, T. P. Chen, C. H. Ang, S. Manju, S. Fung, "A quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage current", Applied Physics Letters, 2004. (Accepted)
5. C. Y. Ng, T. P. Chen, C. H. Ang, "Dependence of barrier height and effective mass on nitrogen concentration at SiOxNy/Si interface and gate oxide thickness", Nanotechnology, 2004. (Accepted)
6. C. Y. Ng, Y. Liu, T. P. Chen, M. S. Tse, "Charging/discharging of silicon nanocrystals embedded in SiO2 matrix induced reduction/recovery in total capacitance and tunneling current", Nanotechnology, 2004. (Accepted)
7. C. Y. Ng, T. P. Chen, H. W. Lau, Y. Liu, M. S. Tse, O. K. Tan, and V. S. W. Lim, “Visualizing Charge Transport in Silicon Nanocrystals Embedded in SiO2 Films with Electrostatic Force Microscopy”, Appl. Phys. Lett., (accepted).
8. C. Y. Ng, T. P. Chen, Y. Liu, and M. S. Tse, D. Gui, “Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed throughout the Gate Oxide in Metal-Oxide-Semiconductor Structures”, Electrochemical and Solid-State Lett., (accepted).
9. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang and L. Chan. “Atomic modeling of nitrogen neighboring effect on negative bias temperature instability of pMOSFETs ”, IEEE Electron Device Lett., Vol. 25, No. 7, pp. 504-506, July 2004.
10. T. P. Chen, Y. Liu, M. S. Tse, S. Fung, and D. Gui, "Optical-Constants Profiling of SiO2 Thin Films Containing Si Nanocrystals", J. Appl. Phys., Vol. 95, No. 12, pp. 8481-8483, June 2004.
11. C. M. Wang, J. H. Hsieh, Y. Q. Fu, C. Li, T. P. Chen, and U. T. Lam, "Electrical properties of TaN-Cu nanocomposite thin films", J. Ceramics Int., 2004, in press.
12. S. S. Tan, T. P. Chen, and C. H. Ang, "Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET", Microelectronics Reliability, (Review Article), accepted, 2004.
13. Y. Liu, T. P. Chen, C. Y. Ng, M. S. Tse, S. Fung, Y. C. Liu, S. Li, and P. Zhao, "Influence of charge trapping in Si nanocrystals embedded throughout the gate oxide in MOS structures on I-V and C-V characteristics", Electrochemical Solid-State Lett., Accepted, 2004.

 
14. C. H. Gao, H. Y. Ong, W. J. Fan , S. F. Yoon, “Analysis of optical gain and threshold current density of 980 nm InGaAs/GaAs compressively strained quantum well lasers”, Computational Materials Science, Vol. 30, pp. 296-302, 2004.

 
15. M. R. Wang, Rusli, J. L. Xie, N. Babu, K. Rakesh, C. Y. Li, "Study of oxygen influences on carbon doped silicon oxide low k thin films deposited by plasma enhanced chemical vapor deposition", J. Appl. Phys., Vol. 95, No. 13, 2004.
16. M. R. Wang, Rusli, M. B. Yu, N. Babu, K. Rakesh, C. Y. Li, "Low dielectric constant films prepared by plasma enhanced chemical vapor deposition from trimethylsilane", Thin Solid Films, 2004, accepted.

 
17. Sun C.Q., Bai H.L., Li S., Tay B.K., Li C.M., Chen T.P., Jiang E.Y., Length, strength, extensibility and thermal stability of a Au-Au bond in the gold monatomic chain, J. PHYS. CHEM B 108 (5), 2162-7, Feb. 2004.
18. Sun C.Q., Zhong W.H., Li S., and Tay B.K., Coordination imperfection suppressed phase stability of ferromagnetic, ferroelectric, and superconductive nanosolids, J PHYS CHEM B 108 (3) 1080-4, Jan 15 2004.
19. Sun C.Q., Surface and nanosolid core-level shift: impact of atomic coordination-number imperfection, PHYS REV B 69 (4), 045105, Jan 12 2004.
20. Sun CQ, Nanosolid Physics: BOLS correlation for the significance of atomic CN imperfection, PHYS REPORTS In press.
21. Sun CQ, Li CM, Li S, Tay BK, Breaking limit of atomic distance in an impurity-free monatomic chain, PHYS REV 2004;B69:245402 (6 pages).
22. Sun CQ, Pan LK, Fu YQ, Tay BK and Li S, Size dependent 2p-level shift of nanosolid silicon, J PHYS CHEM 2003; B107:L5113-5.
23. Sun CQ, Bai HL, LiS, Tay BK, Jiang EY. Size effect on the electronic structure and the thermal stability of a gold nanosolid. ACTA MATERIALIA 2004;52:501-5.
24. Pan LK, Sun CQ. Coordination imperfection enhanced electron-phonon interaction in nanosolid silicon. J APPL PHYS 2004; 95:3819-21.
25. Pan LK, Sun CQ, Li CM, Estimating the extent of surface oxidation by measuring the porosity dependent dielectrics of oxygenated porous silicon, APPL SURF SCI. in press.
26. Pan LK, Sun CQ, Yu GQ, Zhang QY, Fu YQ, and Tay BK, Distinguishing the effect of surface passivation from the effect of size on the photonic and electronic behavior of porous silicon, J APPL PHYS 2004; 96:1704-8.
27. Pan LK, Sun CQ, Li CM, Elucidating information of Si-Si dimer vibration from size dependence of Raman shift, J PHYS CHEM 2004;B108:L3819-21.
28. Zhong WH, Sun CQ, Li S, Size effect on the magnetism of nanocrystalline Ni films at ambient temperature. SOLID STATE COMMUN. 2004;13:603-6.
29. Li CM, Sun CQ, Song S, Choong VE, Maracus G, Zhang XJ, Impedance Labelless detection-based polyrrole DNA biosensor, FRONTIER IN BIOSCIENCE (IN PRESS)
30. Pan LK, Sun CQ, Dielectric suppression of nanosolid silicon, J PHYS CHEM B, IN PRESS
31. Zhong WH, Sun CQ, Li S, Tay BK, and Lau SP, Size and temperature dependence of the magnetism of a ferromagnetic nanosolid of various shapes and structures, J PHYS CHEM B, IN PRESS
32. Pan LK, Ee YK, Sun CQ, Yu GQ, Zhang QY, and Tay BK, Band gap expansion, core level shift and dielectric suppression of nanosolid Si passivated by plasma fluorination, J VAC SCI TECHNOL B 2(2) 583-7 (2004).
33. Li S, White T, Plevert J and Sun CQ, Superconductivity of nanocrystalline MgB2, Supercond. Sci. Technol. 17 (2004) S589-94.
34. Li ZQ, Liu H, Liu XD, Wu P, Bai HL, Sun CQ and Jiang EY, Competition between the double exchange and charge ordering interactions in the bandwidth controlled (La,Nd)0.8Na0.2MnO3 manganites, Physica B: Condensed Matter, 351, 114-20 (2004).
35. Li ZQ, Zhang XH, Yu JS, Liu XJ, Liu XD, Liu H, Wu P, Bai HL, Sun CQ, Lin JJ, Jiang EY, Competition between the charge ordered and ferromagnetic states in (La,Nd)(0.75)Na0.25MnO3 manganites, PHYSICS LETTERS A 325 (5-6): 430-434 MAY 24 2004.
36. Li S, Yip TH, Sun CQ, Widjaja S and Liang MH, Origin of self-aligned nano-domains in MgB2, J. Ceramics International. In press.
37. Li JJ, Zheng WT, Gu CZ, Jin ZS, Zhao YN, Mei XX, Mu ZX, Dong C, Sun CQ, Field emission enhancement of amorphous carbon films by nitrogen implantation, CARBON 42 (2004) 2309–14
38. Li S, Park HS, Sun CQ, Widjaja S and Liao K, Interfacial Reactions and Mechanism of C54 TiSi2 Phase Formation Enhanced by Multi-Thermal-Shock Method, Thin Solid Films (2004) in press.

 
39. X. Zhou, S. B. Chiah, and K. Y. Lim, "A compact deep-submicron MOSFET g_ds model including hot-electron and thermoelectric effects," Solid-State Electron., Vol. 48, No. 12, pp. 2125-2131, 2004. 
40. S. B. Chiah, X. Zhou, K. Y. Lim, L. Chan, and S. Chu, "Source-Drain Symmetry in Unified Regional MOSFET Model," IEEE Electron Device Lett., Vol. 25, No. 5, pp. 311-313, May 2004. 

2003
41. L. K. Ang, T. J. T. Kwan, Y. Y. Lau, "New scaling of Child-Langmuir law in the quantum regime", Phys. Rev. Lett. 91, 208303 (2003).

 
42. T. P. Chen, J. Y. Huang, M. S. Tse, S. S. Tan and C. H. Ang, "Gate Oxide Thickness Dependence of Edge Charge Trapping in NMOS Transistors Caused By Charge Injection under Constant-Current Stress", IEEE Trans. on Electron Devices, accepted for publication.
43. S. S. Tan, T. P. Chen, C. H. Ang and L. Chan, "Relationship between interfacial nitrogen  concentration and activation energies of fixed-charge trapping and interface state  generation under bias-temperature stress condition", Appl. Phys. Lett.,  Vol. 82, No. 2, pp. 269-271, Jan. 2003.
44. S. S. Tan, T. P. Chen and C. H. Ang, "Influences of nitridation on tunneling barrier  change and charge trapping caused by electrical stress", J. Appl. Phys., Vol. 93, No 5, pp. 3114-3116, Mar. 2003.
45. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang and L. Chan, "Nitrogen- enhanced negative bias temperature instability: An insight by experiment and  first-principle calculations", Appl. Phys. Lett., Vol. 82, No. 12,  pp. 1881-1883, Mar. 2003.
46. T. P. Chen, J. Y. Huang, M. S. Tse, S. S. Tan, C. H. Ang, and S. Fung, "Influence of  Interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension  in metal-oxide-semiconductor transistors", Appl. Phys. Lett., Vol. 82,  No. 18, pp. 3113-3115, May 2003.

 
47. X. Li , T. K. S. Wong, Rusli, "Structural and electronic properties of low dielectric constant carbon rich amorphous silicon carbide", Diamond and related materials, 12, pp. 963-967, 2003.

 
48. Sun C.Q., "Oxidation Electronics: Bond-band-barrier correlation and its applications," PROG. MATER. SCI., 48 (6), 521-685, 2003.  
49. Sun C.Q., Pan L. K., Bai H. L., Li Z. Q., Wu P., Jiang E. Y., "Effects of surface passivation and interfacial reaction on the size-dependent 2p-level shift of supported copper nanosolids," ACTA MATERIALIA, 51 (15), 4631-4636, 2003.
50. C. Q. Sun, S. Li, B. K. Tay, "Laser-like mechanoluminescence in ZnMnTe-diluted magnetic semiconductor," APPL. PHYS. LETT., 82 (20), 3568-3569, 2003.
51. Sun C.Q., H. L. Bai, B. K. Tay, S. Li, E. Y. Jiang, "Dimension, strength and thermal stability of a single C-C bond in carbon nanotubes," J. PHYS. CHEM B, 107 (31), 7544-7546, 2003.
52. C. Q. Sun, Bai HL, Li S, Tay BK, Chen T. P., Jiang EY, "Discriminating crystal bonding from the atomic trapping of a core electron at energy levels shifted by surface relaxation or nanosolid formation", J. PHYS. CHEM. B, 107 (2), pp. 411-414, 2003.
53. Sun C.Q., Pan L.K., Fu Y.Q., Tay B.K. and Li S., "Size dependent 2p-level shift of nanosolid silicon," J. PHYS. CHEM B., 107 (22), 5113-5115, 2003. 
54. Fu Y. Q., H. Du, C. Q. Sun, "Interfacial structure, residual stress and adhesion of diamond coatings deposited on titanium", THIN SOLID FILMS, 424 (1), pp. 107-114, 2003.
55. Li S, White T, Laursen K, Tan TT, Sun C. Q., "Intense vortex pinning enhanced by semi-crystalline defect traps in self-aligned nano-structured MgB2", APPL. PHYS. LETT., 83(2), pp. 314-316, 2003.
56. Pan L.K., Sun C.Q., "Dielectric transition and relaxation of nanosolid silicon," J. Appl. Phys., 94 (4), 2695-2700, 2003.
57. Zeng X.T., Zhang S, C. Q. Sun, Liu YC, "Nanometric-layered CrN/TiN thin films: mechanical strength and thermal stability", THIN SOLID FILMS, 424 (1), pp. 99-102, 2003.
58. Zhang YB, Li S, Sun C. Q., Gao W, "Possible Origin of Magnetic Transition Ordering in La2/3A1/3MnO3 Oxides", MATER. SCI. ENG. B, 98 (1), pp. 54-59, 2003.
59. Zheng WT, Sun CQ, Tay BK, "Modulating the work function of carbon by N or O addition and nano-tip fabrication," Solid State Communications, Accepted, 2003.

 
60. X. Zhou, "The Missing Link to Seamless Simulation," IEEE Circuits Devices Mag., Vol. 19, No. 3, pp. 9-17, May 2003. (Invited Feature Article) 

2002
61. C. H. Ang, S. S. Tan, C. M. Lek, W. Lin, Z. J. Zheng, T. P. Chen, and B. J. Cho,  "Suppression of Nitridation-Induced Interface Traps and Hole Mobility Degradation by  Nitrogen Plasma Nitridation", Electrochemical and Solid-State Lett., Vol. 5, Issue 4, pp. G26-G28, 2002.
62. C. H. Ang, C.-M. Lek, S. S. Tan, B.-J. Cho, T. P. Chen, W. H. Lin, and J. Z. Zhen,  "Negative Bias Temperature Instability on Plasma-Nitrided Silicon Dioxide Film", Jpn. J. Appl. Phys., Vol. 41, Part 2, No. 3B, pp. L314–L316, Mar. 2002.
63. T. P. Chen, J. Huang, M. S. Tse, and X. Zeng, "A Novel Approach to Quantitative Determination of Charge Trapping Near Channel/Drain Edge in MOSFETs", Solid-State Electron., (accepted, 2002)
64. S. S. Tan, T. P. Chen, C. H. Ang, Y. L. Tan and L. Chan, "Influence of Nitrogen  Proximity from the Si/SiO₂ Interface on Negative Bias Temperature Instability",  Jpn. J. Appl. Phys. Part 2 (Letters),  (accepted, 2002)
65. Y. Liu, T. P. Chen, C. H. Ang, and S. Fung, "Power-Law Dependence of Charge Trapping on Injected Charge in Very Thin SiO₂ Films", Jpn. J. Appl. Phys., Vol. 41,  Part 2, No. 4A, pp. L384-L386, Apr. 2002.
66. T. P. Chen, M. S. Tse, C. Q. Sun, and S. Fung, "Post-Breakdown Conduction Instability of Ultrathin SiO₂ Films Observed in Ramped-Current and Ramped-Voltage Current-Voltage Measurements", Jpn. J. Appl. Phys., Vol. 41, Part 1, No. 5A, pp. 3047-3051, May 2002.
67. J. Huang, T. P. Chen, M. S. Tse, and C. H. Ang, "Characterization of Interface Degradation in Deep Submicron MOSFETs by  Gate-Controlled-Diode Measurement", Microelectronics Journal, Vol. 33, No. 8, pp. 639-643, Aug. 2002.
68. T. P. Chen, "A Simple Technique to Determine Barrier Height Change in Gate Oxide Caused by Electrical Stress", IEEE Trans. Electron Devices, Vol. 49, No. 8, pp. 1493-1496, Aug. 2002.

 
69. L. K. Pan, C. Q. Sun, B. K. Tay, T. P. Chen, S. Li, "Photoluminescence of Si Nanosolid Near the Lower End of Size Limit," J. Phys. Chem. B Lett.106 (45), 11725-11727, Oct. 2002. 
70. C. Q. Sun, Y. Wang, B. K. Tay, S. Li, H. Huang, Y. Zhang, "Correlation between the melting point of a nanosolid and the cohesive energy of a surface atom," J. Phys. Chem. B 106 (41), pp. 10701-10705, Oct. 2002. 
71. C. Q. Sun, S. Li, B. K. Tay, T. P. Chen, "Upper limit of blue shift in the photoluminescence of CdSe and CdS nanosolids," ACTA Materialia 50 (8), pp. 4687-4693, Oct 2002. 
72. C. Q. Sun, B. K. Tay, X. T. Zeng, S. Li, T. P. Chen, J. Zhou, H. L. Bai, and E. Y. Jiang, "Bond-order-length-strength (Bond-OLS) correlation mechanism for the shape and size dependency of a nanosolid," J. Phys. Condens. Matt.14 (34), pp. 7781-7795 (2002). 
73. W. H. Zhong, C. Q. Sun, B. K. Tay, S. Li, H. L. Bai, and E. Y. Jiang, "Curie temperature suppression of ferromagnetic nanosolids," J. Phys. Condens. Matt.14, pp. L399-L405 (2002). 

 
74. S. F. Yu, "Design and Analysis of Vertical Cavity Surface Emitting Laser", Wily Series in Lasers and Applications, Wiley & Son, Inc, NY, 2002.
75. S. F. Yu, "Modeling the dynamics of VCSELs", a chapter in Vertical Cavity Surface Emitting Laser Devices, Springer-Verlag Series on Photonics, Heidelberg, Germany, pp. 193-225, 2002.

 
76. K. Y. Lim and X. Zhou, "An analytical effective channel-length modulation model for velocity overshoot in submicron MOSFETs based on energy-balance formulation," Microelectronics Reliability, Vol. 42, No. 12, pp. 1857-1864, Dec. 2002.
77. X. Zhou and K. Y. Lim, "De-embedding Length-Dependent Edge-Leakage Current in Shallow Trench Isolation Submicron MOSFETs," Solid-State Electron., vol. 46, no. 5, pp. 769-772, May 2002. 
78. K. Y. Lim and X. Zhou, "MOSFET Subthreshold Compact Modeling with Effective Gate Overdrive," IEEE Trans. Electron Devices, vol. 49, no. 1, pp. 196-199, Jan. 2002. 

2001
79. L. K. Ang, T. J. T. Kwan, and Y. Y. Lau, "Limiting current in a crossed-field nanogap," Phys. Rev. E 64, 017501 (2001). 

 
80. T. P. Chen, M. S. Tse, and X. Zeng, "Snapback behavior of the postbreakdown I-V  characteristics in ultrathin SiO2 films", Appl. Phys. Lett., Vol. 78, No. 4, pp. 492-494, Jan. 2001.
81. T. P. Chen, M. S. Tse, and S. Fung, "Modeling the post-breakdown I-V characteristics of ultrathin SiO₂ films with multiple snapbacks", Jpn. J. Appl. Phys., Vol. 40, Part 2, No. 7A, pp. L666-L668, July 2001.
82. T. P. Chen, M. S. Tse, X. Zeng, and S. Fung, "On the switching behavior of post- breakdown conduction in ultra-thin SiO₂ films",  Semicond. Sci. Technol., Vol. 16, No. 9, pp. 793-797, Sept. 2001.
83. T. P. Chen, "A frequency-controlled low-level current source based on charge pumping",  IEE Electronics Lett., Vol. 37, No. 16, pp. 1046-1047, Aug. 2001.
84. T. P. Chen, M. S. Tse, C. Q. Sun, S. Fung, and K. F. Lo, "Snapback behavior and its  similarity to the switching behavior in ultra-thin silicon dioxide films after hard  breakdown", J. Phys. D: Applied Physics, Vol. 34, No. 17, pp. L95-L98, 2001.

 
85. W. J. Fan and S. F. Yoon, "Valence band structures and optical transitions of Ga_1-xIn_xN_yAs_1-y/GaAs compressively strained quantum wells," Materials Science in Semiconductor Processing, Vol. 4, pp. 563-566 (2001).
86. W. J. Fan and S. F. Yoon, "Electronic structures of GaInNAs/GaAs compressively strained quantum wells," J. Appl. Phys., Vol. 90, pp. 843-847, 2001.

 
87. C. Q. Sun, T. P. Chen, B. K. Tay, X. W. Sun, S. P. Lau, "Bandgap expansion of a nanometric semiconductor," Mater. Phys. Mech. 4, pp. 129-133 (2001). 
88. C. Q. Sun, T. P. Chen, B. K. Tay, S. Li, H. Huang, Y. B. Zhang, L. K. Pan, S. P. Lau, and X. W. Sun, "An extended 'quantum confinement' theory: surface-coordination imperfection modifies the entire band structure of a nanosolid," J. Phys. D: Appl. Phys. 34 (24), pp. 3470-3479, Dec. 2001. 
89. C. Q. Sun, X. W. Sun, B. K. Tay, S. P. Lau, H. Huang, and S. Li, "Dielectric suppression and its effect on photoabsorption of nanometric semiconductors," J. Phys. D: Appl. Phys. 34 (15), pp. 2359-2362, Aug. 2001. 
90. C. Q. Sun, B. K. Tay, S. P. Lau, X. W. Sun, X. T. Zeng, H. Bai, H. Liu, Z. H. Liu, and E. Y. Jiang, "Bond contraction and lone pair interaction at nitride surfaces," J. Appl. Phys. 90 (5), pp. 2615-2617, Sept. 2001. 
91. J. Zhou, C. Q. Sun, K. Pita, Y. L. Lam, Y. Zhou, S. L. Ng, C. H. Kam, L.T. Li, and Z. L. Gui, "Thermally tuning of the photonic band-gap of SiO₂ colloid-crystal infilled with ferroelectric BaTiO₃," Appl. Phys. Lett. 78 (5), pp. 661-663, 2001. 
92. H. T. Ye, C. Q. Sun, H. T. Huang, and P. Hing, "Dielectric transition of nanostructured diamond films," Appl. Phys. Lett. 78 (13), pp. 1826-1828, Mar. 2001. 
93. H. Huang, C. Q. Sun, T. Zhang, and P. Hing, "Grain-size effect on ferroelectric Pb(Zr_1-xTi_x)O-3 solid solutions induced by surface bond contraction," Phys. Rev. B 63 (18), No. 184112, May 2001. 
94. C. Q. Sun, "O-Cu(001): I. Binding the signatures of LEED, STM and PES in a bond-forming way," Surf. Rev. Lett. 8 (3-4), pp. 367-402, July-Aug. 2001. 
95. C. Q. Sun, "O-Cu(001): II. VLEED quantification of the four-stage Cu3O2 bonding kinetics {Movie}," Surf. Rev. Lett. 8 (6), pp. 703-734, Dec. 2001. 

 
96. X. Zhou and K. Y. Lim, "Unified MOSFET Compact I-V Model Formulation through Physics-Based Effective Transformation," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 887-896, May 2001. 
97. X. Zhou, K. Y. Lim, and W. Qian, "Threshold Voltage Definition and Extraction for Deep-Submicron MOSFETs," Solid-State Electron., vol. 45, no. 3, pp. 507-510, Apr. 2001. 
98. K. Y. Lim and X. Zhou, "A Physically-Based Semi-Empirical Effective Mobility Model for MOSFET Compact IÓV Modeling," Solid-State Electron., vol. 45, no. 1, pp. 193-197, Jan. 2001. 

2000
99. A. Valfells, L. K. Ang, Y. Y. Lau, and R. M. Gilgenbach, "Effects of an external magnetic field, and of oblique radio-frequency electric fields on multipactor discharge on a dielectric",Phys. Plasmas 7 750 (2000). 

 
100. H. Huang, C. Q. Sun, and P. Hing, "Surface bond contraction and its effect on the nanometric sized lead zirconate titanate," J. Phys. Condesns. Mat.12 (6), pp. L127-L132 Feb. 2000. 
101. H. T. Ye, C. Q. Sun, and P. Hing, "Control of grain size and size effect on the dielectric constant of diamond films," J. Phys. D: Appl. Phys. 33 (23), pp. L148-L152 Dec. 2000. 
102. C. Q. Sun, "The sp hybrid bonding of C, N and O to the fcc(001) surface of nickel and rhodium," Surf. Rev. Lett. 7 (3), pp. 347-363, June 2000. 

 
103. K. Y. Lim and X. Zhou, "A Physically-Based Semi-Empirical Series Resistance Model for Deep-Submicron MOSFET I-V Modeling," IEEE Trans. Electron Devices, Vol. 47, No. 6, pp. 1300-1302, June 2000. 
104. X. Zhou, "Exploring the Novel Characteristics of Hetero-Material Gate Field-Effect Transistors (HMGFET's) with Gate-Material Engineering," IEEE Trans. Electron Devices, Vol. 47, No. 1, pp. 113-120, Jan. 2000. 
105. X. Zhou, K. Y. Lim, and D. Lim, "A General Approach to Compact Threshold Voltage Formulation Based on 2-D Numerical Simulation and Experimental Correlation for Deep-Submicron ULSI Technology Development," IEEE Trans. Electron Devices, Vol. 47, No. 1, pp. 214-221, Jan. 2000. 

1999
106. L. K. Ang,Y. Y. Lau, and R. M. Gilgenbach, "Resonant absorption of a short-pulse laser in a doped dielectric", Appl. Phys. Lett. 74 2912 (1999). 

 
107. C. Q. Sun, "Comment: The lattice contraction of nanometre-sized Sn and Bi particles produced by an electrohydrodynamic technique," J. Phys. Condesns. Mat.11 (24), pp. 4801-4803, June 1999. 
108. C. Q. Sun, X. W. Sun, H. Q. Gong, H. Huang, H. Ye, D. Jin, and P. Hing, "Frequency shift in the photoluminescence of nanometric SiOx: surface bond contraction and oxidation," J. Phys. Condesns. Mat. 11 (48), pp. L547-L550, Dec. 1999. 
109. C. Q. Sun, H. Q. Gong, P. Hing, and H. T. Ye, "Behind the quantum confinement and surface passivation of nanoclusters," Surf. Rev. Lett. 6 (2), pp. 171-176, Apr. 1999. 

 
110. S. F. Yu,"Nonlinear dynamics of vertical cavity surface emitting lasers", IEEE J. Quantum Electron., Vol. 35, no.3, pp.332-341, 1999.

 
111. X. Zhou, K. Y. Lim, and D. Lim, "A New 'Critical-Current at Linear-Threshold' Method for Direct Extraction of Deep-Submicron MOSFET Effective Channel Length," IEEE Trans. Electron Devices, Vol. 46, No. 7, pp. 1492-1494, July 1999. 
112. X. Zhou, K. Y. Lim, and D. Lim, "A Simple and Unambiguous Definition of Threshold Voltage and Its Implications in Deep-Submicron MOS Device Modeling," IEEE Trans. Electron Devices, Vol. 46, No. 4, pp. 807-809, Apr. 1999. 

1998
113. L. K. Ang and Y. Y. Lau, "Absolute instability in a traveling wave tube model", Phys. Plasmas5 4408 (1998). 
114. R. A. Kishek, Y. Y. Lau, L. K. Ang, A. Valfells, and R. M. Gilgenbach, "Multipactor discharge on metals and dielectrics: historical review and recent theories", Phys. Plasmas 5 2120 (1998). (Invited Paper) 
115. L. K. Ang,Y. Y. Lau, R. A. Kishek, and R. M. Gilgenbach, "Power deposited on a dielectric by multipactor," IEEE Trans. Plasma Sci. 26 290 (1998). (Special Issues on High Power Microwaves Generation) 
116. L. K. Ang,Y. Y. Lau, R. M. Gilgenbach, H. L. Spindler, J. S. Lash, and S. D. Kovaleski, "Surface instability of multipulse laser ablation on a metallic target", J. Appl. Phys. 83 4466 (1998). 

 
117. X. H. Zhang, S. J. Chua, and W. J. Fan, "Band offsets at GaInP/AlGaInP (001) heterostructures lattice matched to GaAs", Appl. Phys. Lett. Vol. 73, pp. 1098-1100, 1998.
118. Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, "Analysis of  optical gain and threshold current of wurtzite InGaN/GaN/AlGaN quantum well lasers", J. Appl. Phys. Vol. 84, pp. 1813-1819, 1998.
119. X. H. Zhang, S. J. Chua, S. J. Xu, and W. J. Fan, "First-principles calculations of GaAs_1-xP_x-Al_0.3Ga_0.7As(001) band offsets", J. Phys.: Condens. Matter, Vol. 10, pp. 577-580, 1998.
120. X. H. Zhang, S. J. Chua, S. J. Xu, and W. J. Fan, "Band offsets at the InAlGaAs/InAlAs (001) heterostructures lattice matched to an InP substrate", J. Appl. Phys. Vol. 83, pp. 5852-5854, 1998.
121. Y. C. Yeo, T. C. Chong, M. F. Li, and W. J. Fan, "Electronic band structures and optical gain spectra of strained wurtzite GaN-Al_xGa_1-xN quantum-well lasers", IEEE Journal of Quantum Electron., Vol. 34, pp. 526-534, 1998.

 
122. C. Q. Sun, "A model of bonding and band-forming for oxides and nitrides," Appl. Phys. Lett.72 (14), pp. 1706-1708, Apr.6 1998. 

 
123. S. F. Yu, "Analysis and design of vertical cavity surface emitting lasers for self-sustained pulsation operation", IEEE J. Quantum Electron., Vol. 34, no.3, pp.497-505, 1998.

 
124. X. Zhou and W. Long, "A Novel Hetero-Material Gate (HMG) MOSFET for Deep-Submicron ULSI Technology," IEEE Trans. Electron Devices, Vol. 45, No. 12, pp. 2546-2548, Dec. 1998. 
125. X. Zhou, T. Tang, L. S. Seah, C. J. Yap, and S. C. Choo, "Numerical Investigation of Subpicosecond Electrical Pulse Generation by Edge Illumination of Silicon Transmission-Line Gaps," IEEE J. Quantum Electron., Vol. 34, No. 1, pp. 171-178, Jan. 1998. 

1997
126. L. K. Ang,Y. Y. Lau, R. M. Gilgenbach, and H. L. Spindler, "Analysis of laser absorption on a rough metal surface", Appl. Phys. Lett. 70 696 (1997). 

 
127. S. F. Yu, "Polarization bistability in vertical cavity surface emitting semiconductor lasers", IEEE/OSA J. Lightwave Technology, Vol. 15, no. 6, pp. 1032-1041, 1997.

1996
128. W. J. Fan, M. F. Li, T. C. Chong, and J. B. Xia, "Valence hole subbands and optical gain of  GaN/Ga_1-xAl_x N strained quantum well", J. Appl. Phys. Vol. 80, pp. 3471-3478, 1996.
129. W. J. Fan, M. F. Li, T.C. Chong, and J. B. Xia, "Optical gain in zinc-blende GaN/Ga_1-xAl_x N strained quantum well laser", Solid State Communications, Vol. 98, pp. 737-740, 1996.
130. W. J. Fan, M. F. Li, T. C. Chong, and J. B. Xia, "Electronic structures of zinc-blende GaN/Ga1-xAlxN compressively strained superlattices and quantum wells", Superlattices and Microstructures, Vol. 19, pp. 251-261, 1996.
131. W. J. Fan, M. F. Li, T. C. Chong, and J. B. Xia, "Band structure parameters of zinc-blende GaN, AlN and their alloy Ga_1-xAl_x N", Solid State Communications, Vol. 97, 381-384, 1996.
132. W. J. Fan, M. F. Li, T. C. Chong, and J. B. Xia, "Electronic properties of zinc-blende GaN, AlN and their alloy Ga_1-xAl_x N",  J. Appl. Phys. Vol. 79, pp. 188-194, 1996.

 
133. X. Zhou, "Numerical Physics of Subpicosecond Electrical Pulse Generation by Nonuniform Gap Illumination," IEEE J. Quantum Electron., Vol. 32, No. 9, pp. 1672-1679, Sept. 1996. 

1995
134. X. Zhou, "On the Physics of Femto-second Electrical Pulse Generation by Nonuniform Gap Illumination," OPTOELECTRONICS--Devices and Technologies, Vol. 10, No. 4, pp. 491-504, Dec. 1995.
135. X. Zhou and H. S. Tan, "Monte Carlo Formulation of Field-Dependent Mobility for Al_xGa_1-xAs," Solid-State Electron., Vol. 38, No. 6, pp. 1264-1266, June 1995. 
136. X. Zhou, S. Alexandrou, and T. Y. Hsiang, "Monte Carlo investigation of the intrinsic mechanism of subpicosecond pulse generation by nonuniform gap illumination," J. Appl. Phys., Vol. 77, No. 2, pp. 706-711, Jan. 1995. 

1994
137. X. Zhou, "Electron Transport in Graded-Band Devices: Interplay of Field, Composition and Length Dependencies," Solid-State Electron., Vol. 37, No. 11, pp. 1888-1890, Nov. 1994.
138. X. Zhou and H. S. Tan, "Monte Carlo formulation of velocity-field characteristics and expressions for Al_xGa_1-xAs," Int. J. Electron., Vol. 76, No. 6, pp. 1049-1062, June 1994.
139. X. Zhou, "Regional Monte Carlo Modeling of Electron Transport and Transit-Time Estimation in Graded-Base HBT's," IEEE Trans. Electron Devices, Vol. 41, No. 4, pp. 484-490, Apr. 1994.

1990
140. X. Zhou and T. Y. Hsiang, "Monte Carlo determination of femtosecond dynamics of hot-carrier relaxation and scattering processes in bulk GaAs," J. Appl. Phys., Vol. 67, No. 12, pp. 7399-7403, June 1990. 

1989
141. Jian-Bai Xia and Wei-Jun Fan, "Electronic structures of superlattices under in-plane magnetic field", Phys. Rev. B, Vol. 40, pp. 8508-8515, 1989.

 
142. X. Zhou, T. Y. Hsiang, and R. J. Dwayne Miller, "Monte Carlo study of photogenerated carrier transport in GaAs surface space-charge fields," J. Appl. Phys., Vol. 66, No. 7, pp. 3066-3073, Oct. 1989. 

2004
1. L. K. Ang and W. S. Koh, "3D Model of Child-Langmuir Law", 31th IEEE International Conference on Plasma Science, pp. 283, 2004.
2. J. H. Wu, L. K. Ang, C. Lu, and A. Q. Liu, "Tunable Two-dimensional PBG with Linear Defect and Finite-Length", IEEE/LEOS Summer Topical Meeting, pp. 85-56, 2004.
3. J. H. Wu, L. K. Ang, C. Lu, and A. Q. Liu, "Tuable Nano-optics Filter via Change of Photonic Bandgap Structure", Proceeding Asia-Pacific Conference of Trasducers and Micro-Nano Technology Sapporp, Japan, vol. 3-1, pp. 72-76, 2004.

 
4. C.Y. Ng, T.P. Chen, and M.S. Tse, “ELECTRICAL CHARACTERISTICS OF ION-BEAM SYNTHESIZED Si NANOCRYSTALS IN SiO2 MATRIX”, The 10th International Symposium on Integrated Circuits, Devices and Systems  (ISIC-2004), 8–10 September 2004 Singapore. (accepted)
5. C.Y. Ng, T.P. Chen, V.S.W. Lim and M.S. Tse, “STUDY OF CHARGE STORAGE IN Si NANOCRYSTALS EMBEDDED IN SiO2 MATRIX BY ELECTROSTATIC FORCE MICROSCOPY”, The 10th International Symposium on Integrated Circuits, Devices and Systems  (ISIC-2004), 8–10 September 2004 Singapore. (accepted)
6. C. Y. Ng, H. W. Lau, T. P. Chen, O. K. Tan, and V. S. W. Lin, “Dissipation of charges in Silicon Nanocrystals embedded in SiO2 dielectric films; An Electrostatic Force Microscopy Study”, The 1st International Conference on Nanotechnology (Nanotech 2004), 13-17 July 2004, Meritus Mandarin, Singapore.
7. Shyue Seng Tan, T. P. Chen, C. H. Ang and L. Chan, A New Phenomenon Waveform-Dependent Lifetime Model for Dynamic NBTI in PMOS Transistor, 2004 Int. Reliability Physics Symposium, April 25–29, 2004, PHOENIX, Arizona, USA.

 
8. W. J. Fan and J. B. Xia, “Energy band and effective mass parameters of wurtzite ZnO”, International Conference Optics & Photonics in Technology Frontier, Japan, 12-15 July 2004.

 
9. C. L. Zhu, Rusli, C. C. Tin, S. F. Yoon, J. Ahn, "Drain-Induced Barrier Lowering Effect and Its Dependence on the Channel Doping in 4H-SiC MESFETs", 7th International Conference on Solid-State and Integrated-Circuit Technology, 2004. (Accepted)
10. V.Ligatchev, J. Ahn, Rusli, S. F. Yoon, "Structure and features of defect states in AlN films deposited by DC and RF magnetron sputtering", Diamond 2004, 2004. (Accepted)
11. C. L. Zhu, Rusli, J. Almira, C. C. Tin, J. Ahn, S. F. Yoon, "Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFET", European Conference on Silicon Carbide and Related Materials, 2004. (Accepted)
12. J. H. Xia, Rusli, R. Gopalakrishan, S. F. Choy, J. Ahn, C. C. Tin, S. F. Yoon, "Reactive Ion Etching Induced Surface Damage of Silicon Carbide", European Conference on Silicon Carbide and Related Materials, 2004. (Accepted)
13. J. H. Xia, Rusli, R. Gopalakrishan, S. F. Choy, J. Ahn, C. C. Tin, S. F. Yoon, "Micromasking Effect from Aluminum and Carbon in Reactive Ion etching of 4H-SiC", MRS-S National Conference on Advanced Materials, 2004. (Accepted)
14. P. Zhao, Rusli, C.C. Tin, S.F. Yoon, J. Ahn, W.G. Zhu, "Decrease in Interface States Density of 4H-SiC MOS under High Electric Field Stress", 7th International Conference on Solid-State and Integrated-Circuit Technology, 2004. (Accepted)
15. P. Zhao, Rusli, Liu Yang, C. C. Tin, W. G. Zhu, S. F. Yoon, J. Ahn, "Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPS", European Conference on Silicon Carbide and Related Materials, 2004. (Accepted)
16. Rusli, M. R. Wang, B. K. Tay, M. B. Yu, C. Y. Li, N. Babu, SH. R. Wang, "Two-Layer Growth of Carbon Doped Silicon Oxide Low Dielectric Constant Films Prepared by PECVD Using Trimethylsilane", 2nd Intertional Conference on Advances of Thin Films and Coatings Technologies, 2004. (Accepted)

 
17. X. Zhou, S. B. Chiah, K. Chandrasekaran, W. Shangguan, G. H. See, C. H. Ang, S. Chu, L.-C. Hsia, "Xsim: Unified Regional Approach to Compact Modeling for Next Generation CMOS," to appear in Proc. of the 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2004), Beijing, October 18-21, 2004. (Invited Paper)
18. X. Zhou, S. B. Chiah, K. Chandrasekaran, K. Y. Lim, L. Chan, and S. Chu, "Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs," Proc. of the 7th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2004), Boston, MA, March 7-11, 2004, Vol. 2, pp. 74-79. (Invited Paper)  
19. S. B. Chiah, X. Zhou, K. Chandrasekaran, K. Y. Lim, L. Chan, and S. Chu, "Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity," Proc. of the 7th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2004), Boston, MA, March 7-11, 2004, Vol. 2, pp. 175-178.  
20. K. Chandrasekaran, X. Zhou, and S. B. Chiah, "Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs," Proc. of the 7th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2004), Boston, MA, March 7-11, 2004, Vol. 2, pp. 179-182.  

2003
21. J. Huang, T. P. Chen and M. S. Tse, "Study of interface trap generation caused by dynamic Fowler-Nordheim (FN)  Stress on nMOSFETs", The 2nd International Conference on Materials for  Advanced Technologies (ICMAT) & IUMRS – International Conference in Asia 2003, Singapore, accepted for presentation.
22. Y. Liu, T. P. Chen, M.S. Tse, P.F. Ho, A.L.K. Tan and Y.C. Liu, "Optical- Property Profiling of SiO2 films Containing Si Nanocrystals Formed by Si+ Implantation", The 2nd International Conference on Materials for Advanced  Technologies (ICMAT) & IUMRS - International Conference in Asia 2003, Singapore, accepted for presentation.
23. Y. Liu, T. P. Chen, Y.Q. Fu, and J.H. Hsieh, "Characterization of Si nanocrystals  embedded in SiO₂ with x-ray photoelectron spectroscopy", The 2nd International  Conference on Materials for Advanced Technologies (ICMAT) & IUMRS - International Conference in Asia 2003, Singapore, accepted for presentation.
24. S. S. Tan, T. P. Chen, R. Agrawal, A. Uddin, K. C. Tee, C. H. Ang and L. Chan,  "Threshold voltage shift of pMOSFETs with ultrathin gate oxide under unipolar  negative bias temperature instability (NBTI) stress", The 2nd International  Conference on Materials for Advanced Technologies (ICMAT) & IUMRS - International Conference in Asia, 2003, Singapore, accepted for presentation.

 
25. Kumta A., Rusli, C. C. Tin, "Numerical simulations of field-plate terminated 4H-SiC schottky diodes using SiO2 and high k dielectric", International Conference on Materials for Advanced Technologies (ICMAT 2003), 2003. (Accepted)
26. M. R. Wang, Rusli, M. B. Yu, N. Babu, K.Rakesh, C. Y. Li, "Low dielectric constant films prepared by plasma enhanced chemical vapor deposition from trimethylsilane", International Conference on Materials for Advanced Technologies (ICMAT 2003), 2003. (Accepted)
27. T.K.S. Wong , V. Ligatchev, Rusli , "Structural properties and defect characterization of plasma deposited carbon doped silicon oxide low-k dielectric films", 202nd Meeting of the Electrochemical Society, 2003. (Accepted)
28. V. Ligatchev, T. K. S. Wong, T. K. Goh, Rusli , "Spectrum of defect states in porous organic low-k dielectric films annealed in argon and nitrogen", Materials Research Society Spring Meeting, 21-25 April 2003, San Francisco, U.S.A., 766, E8.5.1-E8.5.6, 2003.

 
29. X. Zhou, S. B. Chiah, and K. Y. Lim, "A Technology-Based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization," Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, Vol. 2, pp. 266-269. (Invited Paper)  
30. S. B. Chiah, X. Zhou, and K. Y. Lim, "Unified Length-/Width-Dependent Threshold Voltage Model with Reverse Short-Channel and Inverse Narrow-Width Effects," Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, Vol. 2, pp. 338-341.  
31. S. B. Chiah, X. Zhou, and K. Y. Lim, "Unified Length-/Width-Dependent Drain Current Model for Deep-Submicron MOSFETs," Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, Vol. 2, pp. 342-345.  

2002
32. L. K. Ang, "Optimum energy absorption of a short-pulse laser in a doped dielectric slab," The 2nd International Symposium on Laser Precision Microfabrication, Data Storage Institute, National University of Singapore, Singapore, Proc. SPIE Vol. 4426, 74 (2002). 
33. D. Leong, H. S. Djie, and L. K. Ang "Quantum well intermixing using argon plasma generated in a reactive-ion etching system on InGaAs/InGaAsP laser structures," Proceedings of 2002 IEEE/LEOS Workshop on Fibre and Optical Passive Components, Scotland, June 5-6, 148 (2002). 

 
34. X. Zhou, "Mixed-Signal Multi-Level Circuit Simulation: An Implicit Mixed-Mode Solution," Proc. of the 9th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES2002), Wroclaw, Poland, June 2002, pp. 27-31. (Invited Plenary Paper)  
35. X. Zhou, "Multi-Level Modeling of Deep-Submicron MOSFETs and ULSI Circuits," Proc. of the 9th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES2002), Wroclaw, Poland, June 2002, pp. 39-44. (Invited Paper)  
36. X. Zhou, "Xsim: A Compact Model for Bridging Technology Developers and Circuit Designers," Proc. of the 5th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2002), San Juan, Puerto Rico, Apr. 2002, pp. 710-714. (Invited Paper)  
37. S. B. Chiah, X. Zhou, K. Y. Lim, A. See, and L. Chan, "Physically-Based Approach to Deep-Submicron MOSFET Compact Model Parameter Extraction," Proc. of the 5th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2002), San Juan, Puerto Rico, Apr. 2002, pp. 750-753.  
38. K. Y. Lim and X. Zhou, "Compact Model for Manufacturing Design and Fluctuation Study," Proc. of the 5th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2002), San Juan, Puerto Rico, Apr. 2002, pp. 746-749.  

2001
39. L. K. Ang, "Resonant tunneling of electrons in a crossed-field nanogap," The 28th IEEE International Conference on Plasma Science, No. 01CH37255, 160 (2001).

 
40. W. J. Fan and S. F. Yoon, "Valence band structures and optical transitions of GaInNAs/GaAs compressive strained quantum wells," International Conference on Materials for Advanced Technologies, (ICMAT 2001), Singapore, p. 397, July 2001.
41. W. J. Fan and S. F. Yoon, "Electronic structures of GaInNAs/GaAs compressively strained quantum wells," 2001 International Conference on Indium Phosphide and Related Materials (13th IPRM), Nara, Japan, pp. 354-357, May 2001.

 
42. X. Zhou, S. B. Chiah, and K. Y. Lim, "A Compact Deep-Submicron MOSFET g_ds Model Including Hot-Electron and Thermoelectric Effects," Proc. of the 2001 International Semiconductor Device Research Symposium (ISDRS-01), Washington, DC, Dec. 2001, pp. 653-656. 
43. X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, "Technology-Dependent Modeling of Deep-Submicron MOSFET's and ULSI Circuits," Proc. of the 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2001), Shanghai, Oct. 2001, vol. 2, pp. 855–860. (Invited Paper)  
44. X. Zhou and K. Y. Lim, "Experimental Determination of Electrical, Metallurgical, and Physical Gate Lengths of Submicron MOSFET's," Proc. of the 4th International Conference on Modeling and Simulation of Microsystems (MSM2001), Hilton Head Island, SC, Mar. 2001, pp. 44-47.  
45. S. B. Chiah, X. Zhou, K. Y. Lim, Y. Wang, A. See, and L. Chan, "Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET's," Proc. of the 4th International Conference on Modeling and Simulation of Microsystems (MSM2001), Hilton Head Island, SC, Mar. 2001, pp. 486-489.  

2000
46. K. L. Ke, S. J. Chua, W. J. Fan, "Theoretical design of low threshold current density of InAlGaAs material system," Proceedings of SPIE - The International Society for Optical Engineering, vol. 4225, 2000. p 386-391.
47. K. L. Ke, S. J. Chua, W. J. Fan, "Low threshold current density and high quantum efficiency 980nm CW QW laser," Advanced Microelectronic Processing Techniques, Singapure, Nov. 2000. Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4227, pp. 163-168, 2000.

 
48. X. Zhou and K. Y. Lim, "A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET's Technology Development with Process Correlation," Proc. of the 3rd International Conference on Modeling and Simulation of Microsystems (MSM2000), San Diego, CA, Mar. 2000, pp. 333-336.  
49. K. Y. Lim, X. Zhou, and Y. Wang, "Modeling of Threshold Voltage with Reverse Short Channel Effect," Proc. of the 3rd International Conference on Modeling and Simulation of Microsystems (MSM2000), San Diego, CA, March 27-29, 2000, pp. 317-320.  
50. W. Qian, X. Zhou, Y. Wang, and K. Y. Lim, "A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices," Proc. of the 3rd International Conference on Modeling and Simulation of Microsystems  (MSM2000), San Diego, CA, Mar. 2000, pp. 396-399. 

1999
51. X. Zhou and K. Y. Lim, "A Compact MOSFET I_ds Model for Channel-Length Modulation Including Velocity Overshoot," Proc. of the 1999 International Semiconductor Device Research Symposium (ISDRS-99), Charlottesville, VA, Dec. 1999, pp. 423-426.  
52. K. Y. Lim, X. Zhou, and D. Lim, "A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling," Proc. of the 2nd International Conference on Modeling and Simulation of Microsystems (MSM99), San Juan, Puerto Rico, Apr. 1999, pp. 423-426.  

1998
53. T. C. Chong, Y. C. Yeo, M. F. Li, and W. J. Fan, "Analysis of optical gain of strained wurtzite In_xGa_1-xN/GaN quantum well lasers", Nitride Semiconductors Symposium, Boston, Dec. 1997. Materials Research Socity Proceedings, Vol. 482, pp. 1119-1124. 1998.
54. M. F. Li, T. C. Chong, W. J. Fan, K. L. Teo, and Y. P. Feng, "Energy bands of GaN based and II-VI alloy semiconductors for laser threshold analysis", The First Optoelectronics and Communications Conference (OEEC'96), Japan, pp. 376-377, 1996, (Invited Paper)

 
55. K. Y. Lim and X. Zhou, "Modelling of Threshold Voltage with Non-uniform Substrate Doping," Proc. of the 1998 IEEE International Conference on Semiconductor Electronics (ICSE’98), Malaysia, Nov. 1998, pp. 27-31. 
56. K. Y. Lim, X. Zhou, D. Lim, Y. Zu, H. M. Ho, K. Loiko, C. K. Lau, M. S. Tse, and S. C. Choo, "A Predictive Semi-Analytical Threshold Voltage Model for Deep-Submicron MOSFET's," Proc. of the IEEE Hong Kong Electron Devices Meeting (HKEDM98), Hong Kong, Aug. 1998, pp. 114-117. 
57. S. S. Rofail, K. S. Yeo, K. W. Chew, X. Zhou, and T. Tang, "An Experimentally-Based DC Model for the Bi-MOS Structure and Its Adaptation to a Circuit Simulation Environment," Proc. of the IEEE Canadian Conference on Electrical and Computer Engineering (CCECE98), Waterloo, Canada, May 1998, Vol. 1, pp. 37-40. 

1996
58. T. Tang and X. Zhou, "A Dynamic Timing Delay for Accurate Gate-Level Circuit Simulation," Proc. of the 39th Midwest Symposium on Circuits and Systems (MWSCAS-96), Ames, Iowa, Aug. 1996, pp. 325-327. 
59. X. Zhou, S. Alexandrou, and T. Y. Hsiang, "Monte-Carlo Investigation of Subpicosecond Pulse Generation by Nonuniform Gap Illumination," Proc. of the 1994 Conference on Lasers and Electro-Optics (CLEO'94), Anaheim, CA, May 1994, paper CThI20. 

2004
1. J. H. Xia, Rusli, R. Gopalakrishnan, S. F. Choy, C. C. Tin, J. Ahn, and S. F. Yoon, "Micromasking Effect from Aluminum and Carbon in Reactive Ion Etching of 4H-SiC," National Conference on Advanced Materials, Institute of Materials Research and Engineering, Singapore, 6 August 2004.

 
2. Karthik Chandrasekaran, Xing Zhou, and Siau Ben Chiah, "Numerical Investigation of C-V Characteristics of Strained Si-MOSFET", Symposium on Microelectronics (SOM), Institute of Microelectronics, Singapore, 4 June 2004. 
3. Karthik Chandrasekaran, Xing Zhou, and Siau Ben Chiah, "Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs," Symposium on Microelectronics (SOM), Institute of Microelectronics, Singapore, 4 June 2004. 
4. Xing Zhou, "Scalable RF CMOS with Unified Regional Compact Model and Subcircuit Expansion Approach," Workshop on Nanoscale CMOS for High Frequency Applications, Institute of Microelectronics, Singapore, 26 April 2004. 

2003
5. Tan Lay Im, Rusli, "Investigation of Silicon Carbide Based Hall Sensor", National UROP Congress 2003, 2003. (Accepted)

2002
6. L. K. Ang, "Vacuum Nano-Electronics," NanoScience and Engineering Workshop, A*STAR The Science and Engineering Research Council, Singapore, Jan. (2002). (Invited Paper) 

2001
7. W. J. Fan, S. F. Yoon, M. F. Li, and T. C. Chong, "Analysis of optical gain of GaInNAs/GaAs compressive strained quantum well lasers," Asia-Pacific Optical and Wireless Communications Conference, Beijing, China, Vol. 4580, pp. 5-10, Nov. 2001.
8. K. Y. Lim, X. Zhou, and Y. Wang, "Physics-Based Threshold Voltage Modeling with Reverse Short Channel Effect," J. Modeling Simulation Microsystems (JMSM), Vol. 2, No. 1, pp. 51-55, 2001. 
9. X. Zhou, "Hetero-Material Gate Field-Effect Transistors (HMGFET's)," Proc. of the Bluetooth Technology: Devices and Processes for a Wireless World, Santa Clara, CA, Mar. 2001. (Invited Paper) 

2000
10. X. Zhou, "Mixed-Signal Multi-Level Circuit Simulation: An Implicit Mixed-Mode Solution," Proc. of the National Seminar on VLSI: Systems, Design and Technology (VSDT2000), Indian Institute of Technology, Bombay, India, Dec. 2000, pp. 10-15. (Invited Paper)  

1999
11. T. Tang and X. Zhou, "Multi-Level Digital/Mixed-Signal Simulation with Automatic Circuit Partition and Dynamic Delay Calculation," J. Modeling Simulation Microsystems (JMSM), Vol. 1, No. 2, pp. 83-89, Dec. 1999. 

1994
12. Wei-Jun Fan and Jian-Bai Xia, "Calculation of intersubband optical absorption in GaAs/AlGaAs multiquantum well infrared detector", Chinese Journal of Semiconductors, Vol. 15, pp. 655-661, 1994.

1993
13. Wei-Jun Fan and Zong-Quan Gu, "Self-consistent pseudopotential calculation of the electronic structures of short-period (Ge)n(Si)n strained superlattices", Chinese Journal of Semiconductors, Vol. 14, pp. 128-131, 1993.

1992
14. Wei-Jun Fan, Zong-Quan Gu and Jian-Bai Xia. "First-principle self-consistent pseudopotential calculation on the electronic structure of (InAs)₁(GaAs)₁ superlattice", Chinese Physics Letters, Vol. 9, pp. 305-308, 1992.
15. Wei-Jun Fan, Zong-Quan Gu, Jian-Bai Xia and Guo-Hua Li, "First-principle self-consistent pseudopotential calculation of the electronic structures of short-period (GaAs)m(AlAs)n superlattices", ACTA Physica Sinica (Overseas Edition), Vol. 1, 45-50, 1992.
16. Wei-Jun Fan and Jian-Bai Xia, "The electronic structure of In_xGa_1-xAs/GaAs strained-layer superlattice", Chinese Journal of Semiconductors, Vol. 13, pp. 133-142, 1992.

1991
17. Wei-Jun  Fan  and  Jian-Bai  Xia, "Electronic  structures of  [111]-oriented GaAs/Ga_1-xAl_xAs superlattices under electric field", Chinese Journal of  Semiconductors, Vol. 12, pp. 323-331, 1991.

1990
18. Wei-Jun Fan and Jian-Bai Xia, "Subband structures of GaAs/AlGaAs superlattices under crossed electric and magnetic fields", ACTA Physics Sinica, Vol. 39, pp. 1466-1472, 1990.

1988
19. Wei-Jun Fan and Feng-Guo Sun, "Studies of the critical surface and phase transition of the T-H model", ACTA Physica Sinica, Vol. 37, pp. 1357-1362, 1988.

1. Jennings P.J. and Sun C.Q., "Low energy electron diffraction," In the Surface Analysis Methods in Materials Science, Eds O'Connor D.J., Sexton B.A. and Smart R.C., Berlin Springer-Verlag, New York 1992, 4th ed, 2003.

1. D. Leong, H. S. Djie, J. Arokiaraj, T. Mei, and L. K. Ang, "A Pioneer in Plasma Quantum Well-Intermixing," EEE World, School of EEE, Nanyang Tech. Univ., Vol. 6(2), p. 8, July-Dec. 2002. 
2. X. Zhou and S. B. Chiah, "XSIM/DOUST: A Compact Model for Design and Optimization of Ultra-Small Transistors," EEE Research Bulletin, School of eee, Nanyang Technological Univ., Jan. 2002, p. 12. 

1. X. Zhou, "The Virtual Wafer Fab Technology for the Deep-Submicron ULSI Era," Oct. 1997. 
2. X. Zhou, "Multi-Level TCAD Synthesis Approach to the Design and Optimization of Ultra-Small Transistors," Nov. 1997.