|
|
|
|
|
|
|
|
|
|
|
|
|
Principal Investigator: Dr Ang Lay Kee, Ricky Funding: A*STAR Duration: Jan 2005 - Jan 2008
Principal Investigator: Dr Chen Tupei Funding: AcRF Duration: 2001-2004
Principal Investigator: Dr Chen Tupei Collaborator: Chartered Semiconductor Manufacturing
Principal Investigator: Dr Chen Tupei
Principal Investigator: Dr Chen Tupei Funding: NTU-ARC Duration: 2004-2007
Principal Investigator: Dr Fan Weijun Funding: A*STAR Duration: Jan 2005 - Oct 2008
Co-principal Investigator: Dr Pey Kin Leong Co-principal Investigators: Dr Tan Cher Ming (NTU); Chandrasekhar Natarajan (IMRE) Funding: A*STAR (TSRP) Duration: Oct 2004 - Oct 2007
Principal Investigator: Dr Yu Siu Fung Funding: NTU-SUG Duration: 2002-2005
Principal Investigator: Dr Yu Siu Fung Funding: A*STAR Duration: 2002-2005
Principal Investigator: Dr Yu Siu Fung Funding: NTU-RGM Duration: 2002-2005
Principal Investigator: Dr Zhou Xing Collaborators: Chartered Semiconductor Manufacturing; LSI Logic Funding: CSM/NUS/NTU R&D top-up; in-kind
Principal Investigator: Dr Zhou Xing Collaborators: Chartered Semiconductor Manufacturing Funding: SRC® Duration: Jan 2004 - Dec 2005
Principal Investigator: Dr Zhou Xing Research Staff: Dr Shangguan Wangzuo Funding: NTU-RGM Duration: Mar 2004 - Mar 2007 Principal Investigator: Dr Subhash Rustagi (IME) Co-Investigators: Dr Zhou Xing, Dr Koen Mouthaan (NUS) Funding: A*STAR (TSRP) Duration: Oct 2004 - Oct 2007 |
|||||||||
Student: Ms Jean Almira Supervisor: Dr Rusli Candidature: MEng (part-time), 2004
Student: Bian Haijiao Supervisor: Dr Sun Chang Qing Candidature: RS(PhD), 2004
Student: Mr Karthik Chandrasekaran Supervisor: Dr Zhou Xing Candidature: PhD, 2002
Student: Mr Chiah Siau Ben Supervisor: Dr Zhou Xing Candidature: PhD, 2000
Student: Mr Dang Yuxing Supervisor: Dr Fan Weijun Candidature: PhD, 2002
Student: Ding Liang Supervisor: Dr Chen Tupei Candidature: RS(PhD), 2004
Student: Mr Koh Wee Shing Supervisor: Dr Ang Lay Kee, Ricky Candidature: PhD, 2002
Student: Ms Jiang Wei Supervisor: Dr Rusli Candidature: PhD (part-time), 2004
Student: Mr Kumta Amit Sudhakar Supervisor: Dr Rusli Candidature: PhD, 2002
Student: Mr Ng Chi Yung Supervisor: Dr Chen Tupei Candidature: PhD, 2002
Student: Mr Ng Say Tyam Supervisor: Dr Fan Weijun Candidature: PhD, 2001
Student: Mr Shesh Mani Pandey Supervisor: Dr Zhou Xing Candidature: RS(PhD,pt), 2004
Student: Mr See Guan Huei Supervisor: Dr Zhou Xing Candidature: RS(PhD), 2004
Student: Mr Zhao Pan Supervisor: Dr Rusli Candidature: PhD, 2002
Student: Mr Zhong Weihua Supervisor: Dr Sun Chang Qing Candidature: PhD, 2001
Student: Mr Zhu Chunlin Supervisor: Dr Rusli Candidature: PhD, 2002 |
||||||||||
Co-supervisors: Dr Zhou Xing and Dr Ang Lay Kee, Ricky For details: please send email to: exzhou@ntu.edu.sg or elkang@ntu.edu.sg Synopsis: Carbon nanotube (CNT) is currently considered as one of the future building blocks for the next generation nanoelectronics, such as CNT field-effect transistors (CNTFETs) using single-wall CNT (SWCNT) as demonstrated by IBM since 2001. In addition to the small size in nanometer range, CNT has superior properties that may solve the technological barriers faced by the mainstream CMOS silicon technology. Currently, the state-of-the-art CNTFETs can have 3-4 times higher drive current than the MOSFETs counterpart at an overdrive of 1 V, thus providing higher transconductance. However, the scaling of CNTFETs does not follow the traditional transistor scaling of silicon MOSFETs, which will require a complete revision in order to design CNTFET-based nanoelectronics. Due to the unique properties of CNT in the nanometer scale, quantum-mechanical (QM) or first-principle calculation is usually required to understand the scaling of CNTFETs. It is found experimentally that the switching and transport in CNTFETs is controlled by the Schottky Barrier (SB) at the CNT-metal contact. The properties of SB in CNTFETs are sensitive to various factors such as line-up of the CNT bands, adsorption at the contacts, and the 3D electrostatic effects. Thus, it is imperative that a consistent QM model be developed to extract the scaling laws in the atomistic level. In conventional ULSI circuit design, top-down approach is used in modeling transistors at the circuit/system level. Scaling of CMOS technology has already reached the level in which transistors are in the nanometer regime. To apply the bottom-up atomistic models for CNTFETs to the top-down approach in circuit design, the atomistic-level abstraction needs to be bridged to the “compact” device level suitable for circuit simulation. However, the “handshake” of these two approaches, traditionally belonging to different domains, is not trivial, which requires a “dual-representation” at the same level such that lower (atomic) level physics and be “propagated” to the higher (compact) level of abstraction. This type of multi-scale modeling serves as one of the grand challenges in the coming nanoelectronics era. In summary, the project is aimed at developing first-principle models to provide a comprehensive scaling of CNTFETs and discover its unique advantages that can not be found in the traditional MOSFETs. The integration of the developed quantum models to the device level for circuit simulation will be explored. |
||||||||||
Principal Investigator: Dr Rusli Funding: A*STAR Duration: Dec 2001 - Dec 2004
Principal Investigator: Dr Ang Lay Kee, Ricky Funding: NTU-SUG Duration: June 2002 - July 2003
Principal Investigator: Dr Sun Chang Qing Funding: NTU Duration: 2002-2003
Principal Investigator: Dr Sun Chang Qing Funding: NTU Duration: 2000-2003
Co-Principal Investigator: Dr Yu Siu Fung Funding: DSO Duration: 2000-2003 |
||||||||||
Student: Mr Zhong Weihua Supervisor: Dr Sun Chang Qing Candidature: PhD, 2001 Completed: 2004
Student: Mr Pan Likun Supervisor: Dr Sun Chang Qing Candidature: PhD, 2001 Completed: 2004
Student: Mr Liu Yang Supervisor: Dr Chen Tupei Candidature: PhD, 2002 Completed: 2004
Student: Mr Jason Tan Supervisor: Dr Chen Tupei Candidature: PhD, 2001 Completed: 2004 |