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Projects

On-going Research Projects

  • High Current Carbon Nanotube Cathode for Miniature High Power Terahertz Source Applications

  • Principal Investigator: Dr Ang Lay Kee, Ricky
    Funding: A*STAR
    Duration: Jan 2005 - Jan 2008
  • Reliability of Ultra-Thin Gate Dielectrics for ULSI Devices

  • Principal Investigator: Dr Chen Tupei
    Funding: AcRF
    Duration: 2001-2004
  • Characterization of Ultrathin Gate Dielectric Films for Sub-0.13µm Technology

  • Principal Investigator: Dr Chen Tupei
    Collaborator: Chartered Semiconductor Manufacturing
  • Semiconductor Nanocrystals and Their Device Applications

  • Principal Investigator: Dr Chen Tupei
  • Study of Si-nanocrystals-based Light-emitting Devices

  • Principal Investigator: Dr Chen Tupei
    Funding: NTU-ARC
    Duration: 2004-2007
  • Development and Fabrication of 1.55um Photodetector Based on Ga(In)NAs/AlGaAs Quantum Well Intersubband Transition

  • Principal Investigator: Dr Fan Weijun
    Funding: A*STAR
    Duration: Jan 2005 - Oct 2008
  • Electrical Scanning Probe Microscopy of Breakdown Characteristics of Nano-Gate Stacks

  • Co-principal Investigator: Dr Pey Kin Leong
    Co-principal Investigators: Dr Tan Cher Ming (NTU); Chandrasekhar Natarajan (IMRE)
    Funding: A*STAR (TSRP)
    Duration: Oct 2004 - Oct 2007
  • Real Time Fabrication System for the Design and Fabrication of Semiconductor Lasers

  • Principal Investigator: Dr Yu Siu Fung
    Funding: NTU-SUG
    Duration: 2002-2005
  • Quantum Confined Zinc Oxide Thin Film for UV Lasers Applications

  • Principal Investigator: Dr Yu Siu Fung
    Funding: A*STAR
    Duration: 2002-2005
  • Nanostructured Zinc Oxide Films for UV Photonic Devices

  • Principal Investigator: Dr Yu Siu Fung
    Funding: NTU-RGM
    Duration: 2002-2005
  • Project DOUST: Design and Optimization of Ultra-Small Transistors

  • Principal Investigator: Dr Zhou Xing
    Collaborators: Chartered Semiconductor Manufacturing; LSI Logic
    Funding: CSM/NUS/NTU R&D top-up; in-kind
  • Technology-Based Predictive Compact Model Development for Next Generation CMOS

  • Principal Investigator: Dr Zhou Xing
    Collaborators: Chartered Semiconductor Manufacturing
    Funding: SRC®
    Duration: Jan 2004 - Dec 2005
  • Multi-Level Modeling of Nanometer CMOS ULSI Systems

  • Principal Investigator: Dr Zhou Xing
    Research Staff: Dr Shangguan Wangzuo
    Funding: NTU-RGM
    Duration: Mar 2004 - Mar 2007
       
  • Compact Modeling and Characterization of Sub-45nm Active and Passive CMOS Devices

  • Principal Investigator: Dr Subhash Rustagi (IME)
    Co-Investigators: Dr Zhou Xing, Dr Koen Mouthaan (NUS)
    Funding: A*STAR (TSRP)
    Duration: Oct 2004 - Oct 2007
Go to top PhD/MEng Projects
  • Broadband RF power amplifier design using silicon carbide MESFET

  • Student: Ms Jean Almira
    Supervisor: Dr Rusli
    Candidature: MEng (part-time), 2004
  • Laser MBE of ferroeletromagnetic thin film

  • Student: Bian Haijiao
    Supervisor: Dr Sun Chang Qing
    Candidature: RS(PhD), 2004
  • Nanoscale strained-Si/SiGe MOSFET modeling

  • Student: Mr Karthik Chandrasekaran
    Supervisor: Dr Zhou Xing
    Candidature: PhD, 2002
  • Multi-level modeling of ULSI systems in the very-deep-submicron technology era

  • Student: Mr Chiah Siau Ben
    Supervisor: Dr Zhou Xing
    Candidature: PhD, 2000
  • Design III-V-N compound semiconductor devices

  • Student: Mr Dang Yuxing
    Supervisor: Dr Fan Weijun
    Candidature: PhD, 2002
  • Optical and optoelectronic properties of semiconductor nanocrystals

  • Student: Ding Liang
    Supervisor: Dr Chen Tupei
    Candidature: RS(PhD), 2004
  • Analysis and simulation of miniature field emitter array

  • Student: Mr Koh Wee Shing
    Supervisor: Dr Ang Lay Kee, Ricky
    Candidature: PhD, 2002
  • Study of SiC optoelectronic devices

  • Student: Ms Jiang Wei
    Supervisor: Dr Rusli
    Candidature: PhD (part-time), 2004
  • Development of process technology for SiC devices for high power high frequency applications

  • Student: Mr Kumta Amit Sudhakar
    Supervisor: Dr Rusli
    Candidature: PhD, 2002
  • Current transport in SiO2-based dielectric films with and without Si nanocrystals

  • Student: Mr Ng Chi Yung
    Supervisor: Dr Chen Tupei
    Candidature: PhD, 2002
  • Band structures and optical properties of InGaNAs quantum well

  • Student: Mr Ng Say Tyam
    Supervisor: Dr Fan Weijun
    Candidature: PhD, 2001
  • TCAD-synthesis approach to deep-submicron MOS technology development

  • Student: Mr Shesh Mani Pandey
    Supervisor: Dr Zhou Xing
    Candidature: RS(PhD,pt), 2004
  • Scalable RF Compact Modeling for Nanometer CMOS Technology

  • Student: Mr See Guan Huei
    Supervisor: Dr Zhou Xing
    Candidature: RS(PhD), 2004
  • Oxidation of SiC for devices application

  • Student: Mr Zhao Pan
    Supervisor: Dr Rusli
    Candidature: PhD, 2002
  • Size and catalytic effect on the magnetic properties of Fe-nitride thin films

  • Student: Mr Zhong Weihua
    Supervisor: Dr Sun Chang Qing
    Candidature: PhD, 2001
  • Design and fabrication of SiC devices

  • Student: Mr Zhu Chunlin
    Supervisor: Dr Rusli
    Candidature: PhD, 2002
Go to top New Projects/Scholarships
    PhD Project (with scholarship)
  • Carbon Nanotube Based Transistor Modeling for Nanoelectronics

  • Co-supervisors: Dr Zhou Xing and Dr Ang Lay Kee, Ricky
    For details: please send email to: exzhou@ntu.edu.sg or elkang@ntu.edu.sg
    Synopsis:
    Carbon nanotube (CNT) is currently considered as one of the future building blocks for the next generation nanoelectronics, such as CNT field-effect transistors (CNTFETs) using single-wall CNT (SWCNT) as demonstrated by IBM since 2001.  In addition to the small size in nanometer range, CNT has superior properties that may solve the technological barriers faced by the mainstream CMOS silicon technology.

    Currently, the state-of-the-art CNTFETs can have 3-4 times higher drive current than the MOSFETs counterpart at an overdrive of 1 V, thus providing higher transconductance.  However, the scaling of CNTFETs does not follow the traditional transistor scaling of silicon MOSFETs, which will require a complete revision in order to design CNTFET-based nanoelectronics.  Due to the unique properties of CNT in the nanometer scale, quantum-mechanical (QM) or first-principle calculation is usually required to understand the scaling of CNTFETs.  It is found experimentally that the switching and transport in CNTFETs is controlled by the Schottky Barrier (SB) at the CNT-metal contact.  The properties of SB in CNTFETs are sensitive to various factors such as line-up of the CNT bands, adsorption at the contacts, and the 3D electrostatic effects.  Thus, it is imperative that a consistent QM model be developed to extract the scaling laws in the atomistic level.

    In conventional ULSI circuit design, top-down approach is used in modeling transistors at the circuit/system level.  Scaling of CMOS technology has already reached the level in which transistors are in the nanometer regime.  To apply the bottom-up atomistic models for CNTFETs to the top-down approach in circuit design, the atomistic-level abstraction needs to be bridged to the “compact” device level suitable for circuit simulation.  However, the “handshake” of these two approaches, traditionally belonging to different domains, is not trivial, which requires a “dual-representation” at the same level such that lower (atomic) level physics and be “propagated” to the higher (compact) level of abstraction.  This type of multi-scale modeling serves as one of the grand challenges in the coming nanoelectronics era.

    In summary, the project is aimed at developing first-principle models to provide a comprehensive scaling of CNTFETs and discover its unique advantages that can not be found in the traditional MOSFETs.  The integration of the developed quantum models to the device level for circuit simulation will be explored.

Go to top Completed Research Projects
  • Development of Core Competence in Silicon Carbide Technologies for High Temperature, High Power and High Frequency Electronic Devices

  • Principal Investigator: Dr Rusli
    Funding: A*STAR
    Duration: Dec 2001 - Dec 2004
  • Modeling of Broadband Compact Vacuum Power Devices and Nano-electronics

  • Principal Investigator: Dr Ang Lay Kee, Ricky
    Funding: NTU-SUG
    Duration: June 2002 - July 2003
  • Magnetic FeN Nanofilms

  • Principal Investigator: Dr Sun Chang Qing
    Funding: NTU
    Duration: 2002-2003
  • Nanofabrication of magnetic thin films for high-density data storage applications

  • Principal Investigator: Dr Sun Chang Qing
    Funding: NTU
    Duration: 2000-2003
  • Development of Photonic True-Time-Delay Units for Phased-Array Antennas

  • Co-Principal Investigator: Dr Yu Siu Fung
    Funding: DSO
    Duration: 2000-2003
Go to top Completed PhD/MEng Projects
  • Size and nitrogen catalytic effects on the magnetic properties of Fe thin films

  • Student: Mr Zhong Weihua
    Supervisor: Dr Sun Chang Qing
    Candidature: PhD, 2001
    Completed: 2004
  • Optical and dielectric properties of passivated porous silicon

  • Student: Mr Pan Likun
    Supervisor: Dr Sun Chang Qing
    Candidature: PhD, 2001
    Completed: 2004
  • Semiconductor nanocrystals and their applications

  • Student: Mr Liu Yang
    Supervisor: Dr Chen Tupei
    Candidature: PhD, 2002
    Completed: 2004
  • Characterization of ultrathin gate dielectric films for sub-0.13µm technology

  • Student: Mr Jason Tan
    Supervisor: Dr Chen Tupei
    Candidature: PhD, 2001
    Completed: 2004
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