Nano Devices
| Nano Devices | |
| 1. | Z. Wang, W. Zhu, H. Zhu, J. Miao, C. Chao, and O. K. Tan, “Ultrasound Radiating Performances of Piezoelectric Micromachined Ultrasonic Transmitter”, Appl. Phys. Lett., 86 (2005) 033508, 1-3 |
| 2. | M. Maglione, W. Zhu, and Z. H. Wang, “Fisrt Evidence of a Strong Magnetic Effect on the Impedance of Integrated Piezoelectric Resonators”, Appl. Phys. Lett., 87 (2005) 092904, 1-3 |
| 3. | L. L. Sun, O. K. Tan, W. Zhu, “Pb(Zr0.3Ti0.7)O3/PbTiO3 multilayer thin films for pyroelectric infrared sensor application” J. Appl. Phys. Accepted |
| 4. | H. Lu, J. S. Pan, X. F. Chen, W. G. Zhu, and O. K. Tan, “ Influence of Annealing Temperature on the Band Structure of Sol-gel Ba0.65Sr0.35TiO3 Thin Films on n-type Si(100)”, Appl. Phys. Lett., 88, 132907 (2006) 1-3 |
| 5. | Y. X. Dang, W. J. Fan, F. Lu, H. Wang, D. H. Zhang, and S. F. Yoon, “Study on interdiffusion in Si1-xGex/Si single quantum wells: an eight-band k•p formalism approach”, J. Appl. Phys. 99, 076108, 2006 |
| 6. | A. Wei, X. W. Sun, C. X. Xu, Z. L. Dong, M. B. Yu, W. Huang, “Stable field emission from hydrothermally grown ZnO nanotubes”, Appl. Phys. Lett. 88, 213102 (2006) |
| 7. | C. X. Xu, X. W. Sun, S. N. Fang and X. H. Yang, M. B. Yu, G. P. Zhu, and Y. P. Cui, “Electrochemically deposited zinc oxide arrays for field emission”, Appl. Phys. Lett. 88, 161921 (2006) |
| 8. | C.H. Tung, K.L. Pey, L.J. Tang, Y. Cao, M.K Radhakrishnan and W.H. Lin, “Fundamental Narrow MOSFET Gate Dielectric Breakdown Behaviors and Their Impacts on Device Performance”, IEEE Transaction on Electron Devices, Vol. 52, No. 4, 2005, pp. 473-483 |
| 9. | S. Lombardo, J. H. Stathis, B. P. Linder, K.L. Pey, F. Palumbo, C. H. Tung, “Dielectric breakdown mechanisms in gate oxides”, Invited APPLIED PHYSICS REVIEWS on Journal of Applied Physics (2005), vol. 98, pg. 121301-1, 2005. |
| 10. | R. Ranjan, K.L. Pey, C.H. Tung, L.J. Tang, D.S. Ang, G. Groeseneken, S. De Gendt and L.K. Bera, “Breakdown induced thermo-chemical reactions in HfO2 high-k/poly-silicon gate stacks”, APL, 87, 242907, 2005 |
| 11. | R. Ranjan, K.L. Pey, C.H. Tung, D.S. Ang, L.J. Tang, T. Kauerauf, R. Degraeve, G. Groeseneken, S. De Gendt and L.K. Bera, “Ultrafast progressive breakdown associated with metal-like filament formation of breakdown path in HfO2/TaN/TiN transistor”, Applied Physics Letters, Vol. 88, pg. 122907, 2006. Also selected for selected for the April 2006 issue of Virtual Journal of Ultrafast Science |
| 12. | V. L. Lo, K. L. Pey, C. H. Tung and D. S. Ang, T.S. Foo, L.J, Tang, “Percolation resistance evolution during progressive breakdown in narrow MOSFETs,” IEEE Electron Device Letters, 27(5), May, 396-398, 2006. |
| 13. | Y. H. Yan, M. B. Chan-Park, Q. Zhou, C. M. Li, and C. Y. Yue: Functionalization of Carbon Nanotubes by Argon Plasma-Assisted Ultraviolet Grafting. Appl. Phys. Lett., 87 (21), 213101, 2005. IF: 4.308 |
| 14. | L. Huang, S.P. Lau, H.Y. Yang, S.F. Yu, “Local measurement of secondary electron emission from ZnO coated carbon nanotubes”, Nanotechnology 17, 1564-1567 (2006). |
| 15. | D. S. Ang, S. Wang, and C. H. Ling, “Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultra-thin gate P-MOSFET,” IEEE Electron Device Letters, vol. 26, pp. 906-908, 2005 |
| 16. | D. S. Ang and S. Wang, “On the non-Arrhenius behavior of negative-bias temperature instability,” Applied Physics Letters, vol. 88, no. 093506, 2006 |
| 17. | D. S. Ang, “Observation of suppressed interface state relaxation under positive gate biasing of the ultra-thin oxynitride gate P-MOSFET subjected to negative-bias temperature stressing,” IEEE Electron Device Letters, vol. 27, pp. 412-415, 2006 |
| 18. | D. S. Ang and S. Wang, “An insight into the suppressed recovery of the NBTI stressed ultra-thin oxynitride gate P-MOSFET,” accepted for publication by IEEE Electron Device Letters |
| 19. | Pradeep Dixit and Jianmin Miao, “Aspect ratio dependent copper electrodeposition technique for very high aspect ratio through-hole plating”, J. Electrochem. Soc. 153, G552–G559, 2006 |
| 20. | Jianmin Miao, Jianbo Sun and Michel Puech, “Fabrication of thick SiO2 block with a dry-released underneath cavity in silicon for RF MEMS”, Electronics Letters, Vol. 41, No. 11, pp. 662-663, 2005. |
| 21. | Kaixue Ma, Jian-Guo Ma, Jianbo Sun, Jianmin Miao, Manh Anh Do and Kiat Seng Yeo, “A miniaturized silicon-based ground ring guarded patch resonator and filter”, IEEE Microwave and Wireless Components Letters, July 2005, Vol. 15, No. 7, pp. 478-480. |
| 22. | Jianbo Sun and Jianmin Miao, “High performance MEMS inductors fabricated on the localised and planar thick SiO2 layer”, Electronics Letters, 31 March 2005, Vol. 41, No. 7, pp. 446-447. |
| 23. | Jingqi Li, Qing Zhang, Hong Li, Mary B. Chan-Park, Triton X, Influence of Triton X-100 on the characteristics of carbon nanotube field-effect transistors, Nanotechnology, 17 No 3 (2006) 668-673 |
| 24. | Y. H. Yan, M. B. Chan-Park, Q. Zhou, C. M. Li, and C. Y. Yue, Functionalization of Carbon Nanotubes by Argon Plasma-Assisted Ultraviolet Grafting, Applied Physics Letters, 87 (21): Art. No. 213101 2005 |
| 25. | Jianxia Gao, L. P. Yeo, Mary B. Chan-Park, Jianmin Miao, Yehai Yan, Jianbo Sun1, Y. C. Lam and C.Y.Yue Anti-stick post-passivation of high aspect ratio silicon molds fabricated by deep reactive ion etching, J MEMS (accepted) |
| 26. | Jun Zhang, WX Zhou, Mary B. Chan-Park, SR Conner, Argon plasma modification of SU-8 for very high aspect ratio and dense copper electroforming, J Electro Chem Soc, 152 (10): C716-C721 2005 |
| 27. | Y. H. Yan, M. B. Chan-Park, C. Y. Yue, CF4 Plasma Treatment of Polydimethylsiloxane - Effect of Fillers and its Application to High Aspect Ratio UV Embossing, Langmuir, 21(19); 8905-8912 (2005) |
| 28. | Teck Kheng Lee, Sam Zhang, Chee Cheong Wong, Ah Chin Tan, Instantaneous Fluxless Solder Bonding in Ambient Atmosphere, Journal of Applied Physics, 98 : 034904 (2005) |
| 29. | Zhenghao Gan, S.G. Mhaisalkar, Zhong Chen, Zhe Chen, K. Prasad, Sam Zhang, M. Damayanti, “Modification of Ta/Polymeric Low-k Interface by Electron Beam Treatment,” Journal of Electrochemical Society, 153 (1): G30-G34, 2006 |
| 30. | M. Damayanti, Z.H. Gan, T. Sritharan, and S.G. Mhaisalkar, “Effects of Dissolved Nitrogen in Improving Barrier Properties of Ruthenium,” Applied Physics Letters, 88 (4): 044101, 2006 |
| 31. | Zhenghao Gan, Zhong Chen, S. G. Mhaisalkar, Zhe Chen, K. Prasad, and Sam Zhang, “Effect of Electron Beam Treatment on Adhesion of Ta/Polymeric Low-k Interface,” accepted for publication, Applied Physics Letters, 2006. |
| 32. | M. Y. Yan, J. O. Suh, F. Ren, and K. N. Tu, A. V. Vairagar, S. G. Mhaisalkar, Ahila Krishnamoorthy, “Effect of Cu3Sn Coatings on Electromigration Lifetime Improvement of Cu Dual Damascene Interconnects,” Applied Physics Letters, 87 (21): 211103, 2005 |
| 33. | T. V. Zaporozhets, A. M. Gusak, K. N. Tu, and S. G. Mhaisalkar, “3D-Simulation of Void Migration at the Interface between Thin Metallic Film and Dielectric under Electromigration,” J. Applied Physics, 98, 103508, 2005 |
| 34. | A.V. Vairagar, S. G. Mhaisalkar, Ahila Krishnamoorthy, M. A. Meyer, E. Zschech, K.N. Tu, and A. M. Gusak, “Direct evidence of electromigration failure mechanism in dual-damascene Cu interconnect tree structures,” Applied Physics Letters, 87(8): 81909, 2005 |
| 35. | H. Yu, S. G. Mhaisalkar, and E. H. Wong, “Observations of Gelation and Vitrification of a Thermo-setting Resin during the Evolution of Polymerization Shrinkage," Macromolecular Rapid Communications, 26: 1483-1487, 2005. |
| 36. | Zhe Chen, K. Prasad, Z. H. Gan, S. Y. Wu, S. S. Mehta, N. Jiang, S. G. Mhaisalkar, Rakesh Kumar, and C. Y. Li, “Effect of In-Line Electron Beam Treatment on the Electrical Performance of Cu/Organic Low-k Damascene Interconnects,” IEEE Electron Device Letters, 26 (7): 448-450, 2005 |
| 37. | J. Widodo, L. N. Goh, W. Lu, S. G. Mhaisalkar, K. Y. Zeng, L. C. Hsia, “Comparative study on Tri Methyl Silane and Tetra Methyl Cyclo Tetra Siloxanes based Low-k films,” Journal of Electrochemical Society, 152 (4): G246-G251 2005. |
| 38. | A.V. Vairagar, S. G. Mhaisalkar, Ahila Krishnamoorthy, K.N. Tu, A. M. Gusak, M. A. Meyer, E. Zschech, “In-situ observation of electromigration induced void migration in dual-damascene Cu interconnect structures,” Applied Physics Letters, 85 [13], 2502-2504, 2004. |
| 39. | 01. LG Wang, TKS Wong, DW Yu, Y. Li, The electronic onductance and current distribution of a pentacene molecular tap, Int. J. Nanoscience (accepted) |
| 40. | 02. TKS Wong, Electrophosphorescent organic light emitting diodes, device physics, materials and applications, Ch. 15 pp. 1-60, Handbook of Organic Electronics and Photonics (in press) |
| 41. | 03. BJ Chen, XW Sun, TKS Wong, X Hu, A .Uddin, Organic light emitting devices with in situ post growth annealed organic layers, Appl. Phys. Lett, 87, 063505-1 |
